T0254 Search Results

T0254AA

Contextual Info: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low

AGE Module

Contextual Info: MilitaryAerospace Division Military-Aerospace Division PowerM OS IV herm etic M O SFET s BVdss V R d s(O N ) lD(C on t) (/> ) PD (W ) ^is^(pF) Q g(nC ) P ack age Flat pack (FN) T02S8 (HN ) T0254 (CN) Pow er m od ules for high rei applications Sem elab’s 4th Generation M O SFE T s, bipolar

T0247

Abstract: sml1001rAN SML1001RBN
Contextual Info: SEMELAB pie SELECTOR GUIDE VDSS RD SS on ID Pd T03 T0247 T0258 T03G100 T0247 T0247 T0258 D3PAK SOT227 MPack F-Pack T03 T0247 T0254 T03 T0220SM T0247 T0254 I T254 T0257(l) T03 T0247 T0254 T0257 T0220 T03 T0247 T0254 (I) T0254 T0257 T0257(l) T0220 SOT227 T0264

6849a

Abstract: SC 200 T 2n7227
Contextual Info: T emic S e m i c o n d u c t o r s T0254 T0257 N-Channel Devices Military Faftk ‘ Î fi ? ''* r ' \.Vt' f i l V(BRiDSS<V) Hermetic Packages and Industry-Standard Military MOSFETs IRFML50 2N7075 2N7085 | 2N7085 | 2N7224 a IR FM I50 2N7081 2N7081 [RFM250

sublvds to lvds

Abstract: sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836 SN65LVDS305
Contextual Info: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB

T0-254AA

Contextual Info: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]

APT801R2DN

Abstract: APT5085DN
Contextual Info: ADVANCED POWER TECHNOLOGY Tfl Dlf| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN

Contextual Info: SN65LVDS308 www.ti.com SLLS835 – MAY 2007 PROGRAMMABLE 27-BIT PARALLEL-TO-SERIAL RECEIVER FEATURES • • • • • • • • • • • FlatLink 3G Serial Interface Technology Compatible With FlatLink 3G Transmitters Such as SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB

Contextual Info: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET

Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: SEMTECH CORP 5ÔE ]> • 013113*1 DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0257AB PACKAGE 0003011 Ô36 SM8S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

Contextual Info: SCHOTTKY SCHOTTKY RECTIFIERS PACKAGE 2 LEAD HERMETIC &T\ DEVICE TYPE !0 avg AMPS TC=100°C PEAK INVERSE VOLTAGE VOLTS MAX VF @ *FM = 'O (avg) VOLTS 125°C MAX REVERSE CURRENT AMPS 125° C SPD735 7.0 35 0.75 0.015 SPD745 7.0 45 0.75 0.015 SPD1035 10.0 35

Contextual Info: SflE » SEMTECH CORP • 6 1 3 ^ 1 3 ^ 0 0 0 3 0 H 3 Bbl « S E T DUAL SCHOTTKY RECTIFIERS IN HERMETIC ISOLATED T0258AA PACKAGE SM3S42* These devices offer two Schottky rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

Contextual Info: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB

IRHM9250

Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
Contextual Info: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D

Contextual Info: PD - 90713E IRHM7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7230 100K Rads (Si) IRHM3230 300K Rads (Si) IRHM4230 600K Rads (Si) IRHM8230 1000K Rads (Si)

Contextual Info: PD-91299E IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

Contextual Info: h is s e ma i c or n dr u c t o r FSF450D, FSF450R " " m y m a m w m m Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 9A, 500V, Tqs ^o N = 0.600ÎÎ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

rf 157

Contextual Info: Package outlines Package outlines and dimensions Sm artpack packages 4,25 "*i ^ ^ 24 MWHH 44 10 10 -M H 24 44 XT TT 1 H6 . 57 10 -es- K lH -87- C2 . 0,8 tzs. 10 I 113. C3 1.75 rn — 28 — èO 90 LÈ5 i=; 5! n o n o n o . i . o .n.o.n LJ LJ LJ LJ LJ 10 l -

50n06

Contextual Info: OM60N06SA OM60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages

Contextual Info: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

H188

Contextual Info: Data Sheet No. PD-9.887 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8054 Z N-CHANNEL MEGA RAD HARO Product Summary 60 Volt, 0.027», MEGA RAD HARD HEXFET International Rectifier's M E G A RAD H A R D Technology HEXFETs

Contextual Info: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15