46SS452 Search Results

Contextual Info: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET

Contextual Info: Data Sheet No. PD-6.013A International [ml Rectifier HIGH VOLTAGE IR 2 TIO L MOS GATE DRIVER General Description Features The IR2110L is a high voltage, high speed MOSgated power device driver with independent high side and low side referenced output channels. Proprietary

RF830

Contextual Info: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V

IRLL110

Contextual Info: PD 9.869A International Rectifier IRLL110 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V Fast Switching VDSS = 100V

79CU

Contextual Info: International ¡1 !Rectifier PD9969B IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V «Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

itt ol 170

Abstract: ITT DIODE 125 diode 1000v 50a
Contextual Info: Preliminary Data Sheet No. P D -9.935 International Rectifier i l l ] ir g k i o o "CHOPPER" INT-A-PAK MODULES 5o m i2 Fast™ IGBT • Rugged Design •Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents

Contextual Info: Bulletin 125179/B hitemational »^Rectifier ST183S SERIES Stud Version INVERTER GRADE THYRISTORS Features I All diffused design I C e n te r am plifying gate I G u ara n te ed high dv/dt I G u a ra n te e d high di/dt I High surge current capability I Low th erm al im ped an ce

F7406

Contextual Info: PD - 9.1247C International IG R Rectifier IR F7406 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching V dss = -30V