500VOLT Search Results

IRHM8450

Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Contextual Info: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

IRH7450

Abstract: IRH8450
Contextual Info: PD - 91807A IRH7450 IRH8450 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

PL259

Contextual Info: The l-arsen [;lIl:/Mini-ljIlF connectors are popular and economical, used in caseswhere impedance mating is not required. General purpose units designed to operate satisfactorily up to 500 MHz. They have a peak voltage rating of 500Volts. E L E C T R I C A L S P E C I F I C A T I O N S UHF S ER I ES

IRHF7430SE

Contextual Info: PD - 91863A IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No compensation of gate drive circuitry is required because pre and post-irradiation electrical

IRHN7450SE

Contextual Info: PD - 91313B IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

Contextual Info: Provisional Data Sheet No. PD - 9.1394C International IO R Rectifier IRHM7460SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0.32Q, (SEE) RAD HARD HEXFET

transistor gt 322

Contextual Info: PD - 91863 IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.92Ω International Rectifier’s SEE RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

Contextual Info: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents

IRHM7460SE

Contextual Info: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

IRHM7450SE

Abstract: aval
Contextual Info: PD - 91223C IRHM7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

"MOSFET Module"

Abstract: "dual MOSFET Module" mosfet 500 watt welding power FK20SM-10 QJD0512001 welding mosfet
Contextual Info: QJD0512001 Preliminary Dual MOSFET Module 120Amp/500Volts Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Description: Powerex Dual MosFet Module features low 60 mΩ rds(on) is specially designed for customer applications. The modules are isolated for easy mounting with other

IRH7450SE

Contextual Info: PD - 91390A IRH7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

Contextual Info: PD -91863A International I« R Rectifier IRHF7430SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 1.6£2, SEE RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

Contextual Info: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

IRHN7450

Abstract: IRHN8450 JANSH2N7270U JANSR2N7270U 2N7270U
Contextual Info: PD - 90819A IRHN7450 IRHN8450 JANSR2N7270U JANSH2N7270U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

diode.18

Abstract: IRHM7460SE
Contextual Info: Provisional Data Sheet No. PD - 9.1394C IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD

8a 905 surface mount transistor

Abstract: IRHNB7460SE n-Channel mosfet 400v
Contextual Info: PD - 91741 REPETITIVE AVALANCHE AND dv/dt RATED IRHNB7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.

IRF 725

Abstract: 2N6802U IRFE430 JANTX2N6802U JANTXV2N6802U rectifier diode for max 250v 1.5A
Contextual Info: Provisional Data Sheet No. PD - 9.1719 IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N-CHANNEL Ω , HEXFET 500Volt, 1.50Ω The leadless chip carrier LCC package represents the logical next step in the continual evolution of

IRHNA7460SE

Contextual Info: PD - 91399 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.

Contextual Info: P D - 91741 International I R Rectifier dv/dt HEXFET TRANSISTOR R EPETITIVE AVALANCHE AND RATED IRHNB7460SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0.32Q, (SEE) RAD HARD HEXFET Product Summary International R e ctifie r’s (SEE) RAD H AR D te c h n o l­

Contextual Info: Provisional Data Sheet No. PD - 9.1394C International I R Rectifier IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0 .3 2 a (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology

ISAOHM

Abstract: 200G
Contextual Info: FEATURES SPECIFICATIONS • WHM, UltraHigh ohmic value precision series, • WNM, Aryton Perry winding NonInductive available. Inductance <1nH at 1MHZ test, • Designed to meet the most stringent MIL-R-26F, MIL-STD-202 standard requirements • Miniaturized Better power to

IC 555 timer low volt

Abstract: Si9910
Contextual Info: ^ ^ ^ T in c o r p n r a t e d SÌ9910 Adaptive Power MOSFET Driver1 FEATURES dv/dt and d i/d t Control Undervoltage Protection Short-circuit Protection • tn- Shoot-through Current Limiting • Low Quiescent Current • Com patible with W id e Range of MOSFET Devices

pliotron fp

Abstract: pliotron
Contextual Info: FP-62 D E S C R IP T IO N A N D R A T IN G E T U I 61 PAGE 1 4-45 PLIOTRON D ESCRIPTIO N T he FP-62 ionization gage em bodies several unique design features which m ake this tu b e an efficient and reliable device for the m easurem ent of gas pressures. Stem leakage is entirely elim inated by m ounting