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    SIA416DJ Search Results

    SIA416DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIA416DJ-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 11.3A SC70-6L Original PDF 9
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    SIA416DJ Price and Stock

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    Vishay Siliconix SIA416DJ-T1-GE3

    MOSFET N-CH 100V 11.3A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIA416DJ-T1-GE3 Cut Tape 1,932 1
    • 1 $0.42
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    SIA416DJ-T1-GE3 Digi-Reel 1,932 1
    • 1 $0.42
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    SIA416DJ-T1-GE3 Reel 3,000
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    ES Components SIA416DJ-T1-GE3
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    New Advantage Corporation SIA416DJ-T1-GE3 12,000 1
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    Vishay Intertechnologies SIA416DJ-T1-GE3

    Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3)
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    Avnet Americas () SIA416DJ-T1-GE3 Reel 48,000 33 Weeks 3,000
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    SIA416DJ-T1-GE3 Reel 3,000
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    Mouser Electronics SIA416DJ-T1-GE3 59,918
    • 1 $0.41
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    Verical SIA416DJ-T1-GE3 3,000 3,000
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    Arrow Electronics () SIA416DJ-T1-GE3 3,000 33 Weeks 3,000
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    SIA416DJ-T1-GE3 Cut Strips 18 33 Weeks 1
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    Newark () SIA416DJ-T1-GE3 Cut Tape 9,933 1
    • 1 $0.52
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    SIA416DJ-T1-GE3 Reel 3,000
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    Bristol Electronics SIA416DJ-T1-GE3 5,950 8
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    Quest Components () SIA416DJ-T1-GE3 4,760
    • 1 $0.84
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    SIA416DJ-T1-GE3 4,760
    • 1 $0.88
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    TTI SIA416DJ-T1-GE3 Reel 3,000 3,000
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    Chip Stock SIA416DJ-T1-GE3 7,915
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    EBV Elektronik SIA416DJ-T1-GE3 34 Weeks 3,000
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    Vishay Intertechnologies SIA416DJ-T1-GE3.

    Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:19W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SIA416DJ-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIA416DJ-T1-GE3. Reel 48,000 3,000
    • 1 $0.34
    • 10 $0.34
    • 100 $0.34
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    SIA416DJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiA416DJ Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A)a 0.083 at VGS = 10 V 11.3 0.130 at VGS = 4.5 V 9 Qg (Typ.) 3.5 nC PowerPAK SC-70-6L-Single • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiA416DJ SC-70-6L-Single SiA416DJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiA416DJ

    Contextual Info: SiA416DJ Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A)a 0.083 at VGS = 10 V 11.3 0.130 at VGS = 4.5 V 9 Qg (Typ.) 3.5 nC PowerPAK SC-70-6L-Single • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiA416DJ SC-70-6L-Single SiA416DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model SiA416DJ www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiA416DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402 PDF

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 PDF

    N-Channel MOSFETs

    Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF