SI7636DP Search Results

Si7636DP

Abstract: Si7636DP-T1-E3
Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ) 36 • Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

SI7636DP-T1-E3. Vishay

Abstract: Si7636DP
Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ.) 36 • Halogen-free According to IEC 61249-2-21 Available • Ultra-Low On-Resistance Using High Density

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ.) 36 • Halogen-free According to IEC 61249-2-21 Available • Ultra-Low On-Resistance Using High Density

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ) 36 • Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

72791

Abstract: Si7636DP
Contextual Info: SPICE Device Model Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ) 36 • Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

Si7636DP

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.004 @ VGS = 10 V 28 0.0048 @ VGS = 4.5 V 25 Qg (Typ) 36 • Ultra-Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ.) 36 • Halogen-free According to IEC 61249-2-21 Available • Ultra-Low On-Resistance Using High Density

AN609

Abstract: Si7636DP
Contextual Info: Si7636DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si7636DP

Abstract: Si7636DP-T1-E3 Si7636DP-T1-GE3
Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.004 at VGS = 10 V 28 0.0048 at VGS = 4.5 V 25 Qg (Typ.) 36 • Halogen-free According to IEC 61249-2-21 Available • Ultra-Low On-Resistance Using High Density

A2825

Contextual Info: Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES SUMMARY PRODUCT VDS (V) 30 rDS(on) (W) ID (A) 0.004 @ VGS = 10 V 28 0.0048 @ VGS = 4.5 V 25 D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power RoHS COMPLIANT MOSFET Technology

s40443

Contextual Info: Si7636DP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested

72791

Abstract: Si7636DP
Contextual Info: SPICE Device Model Si7636DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

MIC2150

Abstract: CRCW06031001FKEA vj0603a181 FZ 87 1500 6.3V GRM21BR61C106KE15L X7R 2kv murata
Contextual Info: MIC2150/MIC2151 2-Phase Dual Output PWM Synchronous Buck Control IC General Description Features The MIC2150/1 are simple 2-phase dual-output synchronous buck control ICs featuring small size and high efficiency. The ICs implement PWM control at 500kHz MIC2150 or 300kHz (MIC2151), with the outputs

TPS5117

Abstract: SN0608098 EMC4002 MEC5035 SRN100KJ-6-GP BCM5761 WISTRON power sequence EPSON C691 MAIN THERMAL fuse M33 07F schematic lcd inverter dell
Contextual Info: 5 4 3 2 1 D D FOOSE 15" UMA Schematics Document uFCPGA Mobile Penryn www.kythuatvitinh.com 2008-06-04 Intel Cantiga-GM + ICH9M C C REV : -1 B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM A A Wistron Corporation

KB3926

Abstract: RTM875N-606-VD-GR bosch 0 281 003 039 Quanta qt6 bosch AXF 12V ME4410A G9931P1U bosch 0 281 003 009 bosch amplifier 0831 006 003 BOSCH 281 005 019
Contextual Info: 1 2 3 4 PCB STACK UP 6L 5 7 8 QT6 BLOCK DIAGRAM LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : IN2 DREFCLK,DREFCLK#

CX20561-14Z

Abstract: max8731ae WPCE773LA b24 b03 so-8 P2003EV ICS9LPRS355 cx2056 WPCE775L p2003evg AO3413-GP
Contextual Info: 5 4 3 2 1 Warrior Intel UMA Block Diagram D Penryn SV 16 TPS51120 DDRII Slot 0 667/800 12 Cantiga-GM/GL AGTL+ CPU I/F DDRII 667/800 Slot 1 INTEGRATED GRAHPICS DDR II 667/800 Channel B LVDS, CRT I/F 13 PCIE 6,7,8,9,10,11 C LCD WXGA+ LVDS Dual Channel DDR I/F

SM 630 finger print module

Abstract: ADP3208J RTS5158E SE330U2VDM-L-GP USB232 WPCE776 BQ24740 CT3528 ADP3208 EMC2102-DZK-GP
Contextual Info: A B C D SYSTEM DC/DC LZ2 Block Diagram 4 E Project code: PCB P/N Revision : : INPUTS Penryn SV 35W 3 5V_S5 3D3V_S5 EMC2102 DDR2 socket PCB 8-LAYER STACKUP INPUTS 15 DCBATOUT 1D8V_S3 667/800/1066MHz@1.05V GND R.G.B DDR2 socket 3 TPS51100 APL5912 1D8V_S3 APL5912

SN0608098-GP

Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Contextual Info: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation

RTM880N-796

Abstract: RTL8111DL KB3926 RTS5159 G786P8 RTL8103E 8111DL 966a quanta ut12 kb3926 d2
Contextual Info: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 UT12 UMA SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 TOP IN1 IN2 VCC IN3 BOT DDRII DDRII-SODIMM1 667/800 MHz AMD Lion Sabie Griffin PAGE 6,7 DDRII DDRII-SODIMM2 01 CPU THERMAL SENSOR S1G2 Processor

SiI3811

Abstract: AE1421 Mitsubishi DA U31 sc2625 NTC SD-15 DELL DA-2 power supply diagram SSLVC08APWR-GP Wistron Corporation ST470U2D5VDM ICS954226AGLF
Contextual Info: Barbados Block Diagram Intel Mobile CPU Clock Generator ICS954226 /CV140PAG 3 Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400 /533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM

kbc1091

Abstract: isl6260 R5C835 C945 complement BQ24740 wistron karia foxconn U58Y 220KR2J-L2-GP 15R2J-GP
Contextual Info: 5 4 3 2 1 D C D Wistron Confidential www.kythuatvitinh.com MV 2008/05/15 REV :-1 B A C B A <Variant Name> Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Date: Document Number Friday, May 16, 2008

G5243T11U

Abstract: WPCE775L R23G G682L09TT12U dk05 SSX35BCB Sony TV SMPS AC495 ich9 quanta
Contextual Info: 1 2 3 4 5 1 TW1 Block Diagram CPU Penryn 14.318MHz P3-4 478 PIN micro FC-PGA A A FSB 667 MHz(166X4) FSB 800MHz(200X4) FSB 1066MHZ(266X4) CLOCK GEN ICS9LPRS365 DVI DVI P23 LCD Cantiga LVDS P7 CRT R/G/B P10 UNBUFFERED DDRII SODIMM DDRII 667/800 P2 P11 GM45