SI3493DV Search Results

Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition

Si3493DV

Abstract: Si3493DV-T1
Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance

Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition

Si3493DV

Contextual Info: Si3493DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -7 0.035 @ VGS = -2.5 V - 6.2 0.048 @ VGS = -1.8 V - 5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance

Si3493DV

Abstract: Si3493DV-T1 marking code vishay SILICONIX 93xxx
Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance

Si3493DV

Abstract: AN609
Contextual Info: Si3493DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

93XXX

Abstract: SI3493DV
Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition

Si3493DV

Contextual Info: SPICE Device Model Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

93XXX

Abstract: SI3493DV
Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance

SI3493DV

Contextual Info: Si3493DV New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -7 0.035 @ VGS = -2.5 V - 6.2 0.048 @ VGS = -1.8 V - 5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance

Si3493DV

Contextual Info: SPICE Device Model Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3493DV

Abstract: Si3493DV-T1-E3 93XXX
Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition

Si3493BDV

Abstract: Si3493DV Si3493BDV-T1-E3 Si3493DV-T1 Si3493DV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3493BDV vs. Si3493DV Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET TSOP-6 Identical Part Number Replacements Si3493BDV-T1-E3 Replaces Si3493DV-T1-E3 Si3493BDV-T1-E3 Replaces Si3493DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si3493DV

Abstract: 93xxx Si3493DV-T1
Contextual Info: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no