STE180N Search Results

isotop mosfet 180A 100V

Abstract: STE180NE10
Contextual Info: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

Contextual Info: _ • 0045644 fZ 7 Ä 7# ETS ■ SGTH _ S C S -T H O M S O N [Ä « [L iO T r e s S T E 1 8 0 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss STE180N05 50 V R d S o ii < 0.006 a Id 180 A ■ HIGH CURRENT POWER MODULE

e180ne10

Abstract: isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97
Contextual Info: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP

STE180N05

Abstract: STH65N05
Contextual Info: STE180N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N05 50 V < 0.006 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

isotop mosfet 180A 100V

Abstract: schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control
Contextual Info: STE180NE10  N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 6 mΩ 180 A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

STE180N10

Abstract: Ultrasonic welding circuit diagram S18000
Contextual Info: STE180N10 N - CHANNEL 100V - 0.0055 Ω - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.007 Ω 180 A TYPICAL RDS(on) = 0.0055 Ω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

isotop mosfet 180A 100V

Abstract: STE180N10
Contextual Info: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

e180ne10

Contextual Info: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP

Contextual Info: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s

3C043

Contextual Info: S TE 180N 10 N - CHANNEL 100V - 0.055 Q - 180A - ISOTOP POWER MOSFET TYPE STE180N 10 V dss RDS on Id 100 V < 0 .0 0 7 Í2 180 A TYPICAL R d s (oii) = 0.055 Q 100% AVALANCHE TESTED . LOW INTRINSIC CAPACITANCE . GATE CHARGE MINIMIZED . REDUCED VOLTAGE SPREAD

STE180N10

Contextual Info: £ j ï SGS-THOMSON S T E 1 8 0 N 10 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N10 dss 100 V RDS on Id < 0 .0 0 7 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING)

Contextual Info: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

0n05

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 1 8 0N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N05 dss 50 V RDS on Id < 0 .0 0 6 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH65N05 FOR RATING)

STE180N10

Abstract: STH60N10
Contextual Info: STE180N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N10 100 V < 0.007 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

Ultrasonic welding circuit diagram

Abstract: schematic diagram UPS Ultrasonic welding circuit STE180NE10 isotop mosfet 100V SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

STE180N10

Contextual Info: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

e180ne10

Abstract: E180N STE180NE10 STE180N JESD97
Contextual Info: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

SOT227B

Abstract: STE15NA100 STE180NE10 STE24NA100 STE26NA90 STE40NA60
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su jen\ 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce SOT-227B (ISOTOP) $ up M b i Microelectronics C # e p a npM M eH eH M a: n p M B O flH w e C M C T e M b i, 6 jio k m n M T a H M ^ UPS, 6 n o K M riM T a H M A c n p e o 6 p a 3 0 B a H M e M

STE30NA50-DK

Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0