ST93CS67 Search Results

ST93CS66

Abstract: ST93CS67 st93CS66M1 but options mqs
Contextual Info: ST93CS66 ST93CS67 S G S -1 H 0 M S 0 N M [M ilLI gïï[i3©K3D(i§ SERIAL MICROWIRE BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

Contextual Info: ST93CS66 ST93CS67 SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4K 256 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING

Contextual Info: r = 7 SGS-THOMSON *J M . HDWilLE üMlli!!lll gi ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K (256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

ST93CS66

Abstract: ST93CS67
Contextual Info: ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K 256 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66 – 2.5V to 5.5V for the ST93CS67

ST93CS66

Abstract: ST93CS67
Contextual Info: ¿ Z 7 S G S -T H O M S O N ^ 7 EfflD [f3 ô [ilLEl(gnj[S©[iiDD(g@ Mm ST93CS66 ST93CS67 SERIAL ACCESS MICROWIRE BUS 4K (256 x 16) EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING

Contextual Info: / T T SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi ST93CS66 ST93CS67 SERIAL M IC R O W IR E BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: SGS"THOMSON ST93CS66 ST93CS67 "*J m. IffltMilUIWMDIgS SERIAL ACCESS MICROWIRE BUS 4K 256 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

Contextual Info: /= T ST93CS66 ST93CS67 S C S -T H O M S O N SERIAL ACCESS CMOS 4K bit 256 x 16 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAM­ MING

Contextual Info: ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K 256 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66 – 2.5V to 5.5V for the ST93CS67

Contextual Info: ST93CS66 ST93CS67 4K 256 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66

4K x 8 EEPROM Memory

Contextual Info: ST93CS66 ST93CS67 SERIAL MICROWIRE BUS 4K 256 x 16 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66

M93S66

Abstract: ST93CS66 ST93CS67
Contextual Info: ST93CS66 ST93CS67 4K 256 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS66

SO8 Wide Package

Abstract: 1205 SO8 4463 SO8 WIDE TSSOP8 texas M24128 M24256 M24256A M24C01 M24C02
Contextual Info: Serial EEPROMs I2C, SPI AND MICROWIRE BUSES ST EEPROM products are the standard of reference in the industry, built with sub-micron technology and offering leading performances. The ranges include serial access EEPROMs with the 400 KHz, I2C low cost, 2-wire bus and densities up to 256 Kbit; fast 1 MHz

Contextual Info: Æ * 7 7 /« S G S -T H O M S O N 5 ' L iO T IM S S T 9 3 C S 6 7 2.5V SERIAL ACCESS CMOS 4K bit 256 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: S G S -T H O M S O N » iL iW iO g i S T 9 3 C S 6 7 2.5V SERIAL ACCESS CMOS 4K bit (256 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION * SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM

atmel 93C46

Abstract: 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel
Contextual Info: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

for atmel 416 24c16 an

Abstract: low cost eeprom programmer circuit diagram 93C461 how to reset atmel 24c16 24w04 program 24c04 CHIP 8-PIN 24c16 93c566 24w02 93CS561 93C46A1
Contextual Info: Non-Volatile Memory Products Non-Volatile Memory Products Package Dimensions Table of Contents EEPROM Standard Products Family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .184

s2914a

Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
Contextual Info: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .

Device-List

Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which