ST93C67 Search Results

Contextual Info: ST93C66 ST93C67 SGS-THOMSON llllM JilLliM W Iiei 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: w # SGS-THOMSON V # . WöfgMilLIKgTnsiOliiOögS ST93C66 ST93C67C SERIAL MICROW IRE BUS 4K 256 x 16 or 512 x 8 EEPROM • 1 MILLION ERASE/W RITE CYCLES, wfth 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 2 5 6 x 1 6 or 5 1 2 x 8 ■ BYTE/W ORD and ENTIRE MEMORY

Contextual Info: / T T S G S -T H O M S O N *7 # . ST93C66 ST93C67C SERIAL MICROWIRE BUS 4K 256 x 16 or 512 x 8 EEPROM • 1 MILLION ERASE/WRrTE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

ST93C66

Abstract: ST93C67 RU110
Contextual Info: S G S -IH O M S O N ST93C66 5 7 . ^a ^ ô [iLi© (Q)[ia(gS ST93C67C SERIAL MICROWIRE BUS 4K (256 x 16 or 512 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY

Contextual Info: ST93C66 ST93C67 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

M93C66

Abstract: ST93C66 ST93C67
Contextual Info: ST93C66 ST93C67 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: SGS'THOMSON ST93C66 ST93C67C ^7# RfilOtg^OilLKgTOtoHDtgi SERIAL MICROWIRE BUS 4K 256 x 16 or 512 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 2 5 6 x 1 6 or 5 1 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: ST93C66 ST93C67C SGS-THOMSON llllM JilLliM W Iiei 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

ST93C66

Abstract: ST93C67
Contextual Info: ST93C66 ST93C67C SERIAL MICROWIRE BUS 4K 256 x 16 or 512 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

s2914a

Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
Contextual Info: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA