SST2605 Search Results
SST2605 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SST2605Contextual Info: 15Jun2010Rev . C SST2605 -4.0A, -30V,RDS ON 80mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient |
Original |
sst2605-250ua15-jun-2010 | |
SST2605Contextual Info: SST2605 -4.0A, -30V,RDS ON 80mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. The SST2605 utiltzed advance processing techniques to achieve the lowest 0.20 0.60 Ref. possible on-resistance, extermely efficient and cost-effectiveness device. |
Original |
sst2605ot-2637ref20ref+1 | |
sst2605Contextual Info: SST2605 -4.0A, -30V,RDS ON 80mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. 0.20 The SST2605 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. possible on-resistance, extermely efficient and cost-effectiveness device. |
Original |
sst2605ot-2637ref20ref+1 | |
secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
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Original |
sgsr809-asc-59sgsr809-bsgsr809-c+12 | |
secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
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Original |
sc-59sgsr809-asgsr809-bsgsr809-c+12 |