SSS4N80AS Search Results
SSS4N80AS Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSS4N80AS | Fairchild Semiconductor | Advanced Power Mosfet | Original | 168.86KB | 7 | ||
| SSS4N80AS | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSS4N80AS | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 144.79KB | 6 |
SSS4N80AS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SSS4N80ASContextual Info: SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V |
Original |
sss4n80aso-220f | |
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Contextual Info: SSS4N80AS Advanced Power MOSFET FEATURES BV0SS = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ RoS on = 3.0 £2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|iA (M ax.) @ VDS = 800V |
OCR Scan |
sss4n80as | |
SSS4N80AS
Abstract: BVDSS
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Original |
sss4n80aso-220fbvdss | |
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Contextual Info: SSS4N80AS Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax. @ VOS= 800V |
OCR Scan |
sss4n80aso-220f | |
SSS4N80ASContextual Info: SSS4N80AS Advanced Power MOSFET FEATURES B V dss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2.8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 ¡jA (Max.) @ VDS = 800V |
OCR Scan |
sss4n80aso-220f00405sb | |
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Contextual Info: SSS4N80AS A d v a n c e d Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 2.450 £1 (Typ.) 00 Rugged Gate Oxide Technology |
OCR Scan |
sss4n80as | |
SSS4N80ASContextual Info: SSS4N80AS FEATURES BV A valan che R ugged T ech n o lo g y • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — 800 V ^ D S o n = 3.0 Q. D ■ ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A (M ax.) @ V DS = 800V |
OCR Scan |
sss4n80as | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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Original |
sc70-6ot-23fdr8321lfdr8521l+13 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 |