SSP4N90 Search Results
SSP4N90 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSP4N90 | Samsung Electronics | N-Channel Power MOSFETS | Scan | 163.12KB | 5 | ||
| SSP4N90 | Samsung Electronics | N-Channel Power MOSFETS | Scan | 266.63KB | 5 | ||
| SSP4N90A | Fairchild Semiconductor | Advanced Power MOSFET | Original | 351.51KB | 7 | ||
| SSP4N90A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSP4N90A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 167.7KB | 6 | ||
| SSP4N90AS | Fairchild Semiconductor | Advanced Power MOSFET | Original | 355.59KB | 7 | ||
| SSP4N90AS | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSP4N90AS | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.22KB | 6 |
SSP4N90 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
250M
Abstract: SSP4N90
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OCR Scan |
ssp4n90o-2207tbmi42002a44s+1 | |
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Contextual Info: SSP4N90A Advanced Power MOSFET FEATURES B ^ = 900 V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4 A ■ ■ Extended Safe Operating Area Lower Leakage Current . 25 jiA (Max.) @ VDS = 900V |
OCR Scan |
ssp4n90ao-220 | |
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Contextual Info: SSP4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 900V |
OCR Scan |
ssp4n90as | |
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Contextual Info: SSP4N90AS A d va n ce d Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 (iA (Max.) @ VDS = 900V |
OCR Scan |
ssp4n90asg404q0o-22000m1n+2 | |
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Contextual Info: SSP4N90AS Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4 .5 A ■ ■ Extended Safe Operating Area Lower Leakage Current : 25nA (Max.) @ VDS = 900V |
OCR Scan |
ssp4n90ast0-220 | |
SSP4N90AContextual Info: SSP4N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 5.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
ssp4n90ao-220 | |
SSP4N90ASContextual Info: SSP4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
ssp4n90aso-220 | |
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Contextual Info: SSP4N90A Advanced Power MOSFET FEATURES B ^D S S Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V |
OCR Scan |
ssp4n90aavalan142003b32flo-220+3 | |
SSP4N90ASContextual Info: Advanced SSP4N90AS Power MOSFET FEATURES - 900 V ^D S on = 3 . 7 Q. B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge LO Avalanche Rugged Technology II Q ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V |
OCR Scan |
ssp4n90as | |
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Contextual Info: Advanced SSP4N90A Power MOSFET FEATURES BVDSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V |
OCR Scan |
ssp4n90a | |
250M
Abstract: SSP4N90
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OCR Scan |
ssp4n90o-220ib4142250m | |
SSP4N90AContextual Info: Advanced SSP4N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 4 A ■ E xtended S afe O pe ra ting A rea |
OCR Scan |
ssp4n90ao-220 | |
SSP4N90
Abstract: SSP4N90AS
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OCR Scan |
ssp4n90aso-220ssp4n90 | |
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Contextual Info: SSP4N90A A d van ced Power MOSFET FEATURES BVdss ~ 900 V • Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 5.0 £2 lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 u A (M a x ) @ VOS= 900V |
OCR Scan |
ssp4n90ao-220100lc | |
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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Original |
stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |
SSP6N60
Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
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OCR Scan |
ssp4n55ssp6n55ssp7n55ssp4n60+11 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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Original |
thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
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Original |
2sk11192sk11202sk11512sk1152+16 | |
FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
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Original |
sc70-6sc75-6supersottm-3/sot-23power247tm+10 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
ssp11n60s5
Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
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Original |
ssp11n60s5ssp2n90ao-220ab/to-220ssp2n80a+12 | |
IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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Original |
rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |