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    SSP4N90 Search Results

    SSP4N90 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SSP4N90
    Samsung Electronics N-Channel Power MOSFETS Scan PDF 163.12KB 5
    SSP4N90
    Samsung Electronics N-Channel Power MOSFETS Scan PDF 266.63KB 5
    SSP4N90A
    Fairchild Semiconductor Advanced Power MOSFET Original PDF 351.51KB 7
    SSP4N90A
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SSP4N90A
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 167.7KB 6
    SSP4N90AS
    Fairchild Semiconductor Advanced Power MOSFET Original PDF 355.59KB 7
    SSP4N90AS
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SSP4N90AS
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 169.22KB 6

    SSP4N90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    250M

    Abstract: SSP4N90
    Contextual Info: N-CHANNEL POWER MOSFETS SSP4N90 FEATURES • Lower R d s o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    ssp4n90o-2207tbmi42002a44s+1250m PDF

    Contextual Info: SSP4N90A Advanced Power MOSFET FEATURES B ^ = 900 V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4 A ■ ■ Extended Safe Operating Area Lower Leakage Current . 25 jiA (Max.) @ VDS = 900V


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    ssp4n90ao-220 PDF

    Contextual Info: SSP4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 900V


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    ssp4n90as PDF

    Contextual Info: SSP4N90AS A d va n ce d Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 (iA (Max.) @ VDS = 900V


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    ssp4n90asg404q0o-22000m1n+27tb4142dd3b33d PDF

    Contextual Info: SSP4N90AS Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4 .5 A ■ ■ Extended Safe Operating Area Lower Leakage Current : 25nA (Max.) @ VDS = 900V


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    ssp4n90ast0-220 PDF

    SSP4N90A

    Contextual Info: SSP4N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 5.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original
    ssp4n90ao-220 PDF

    SSP4N90AS

    Contextual Info: SSP4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original
    ssp4n90aso-220 PDF

    Contextual Info: SSP4N90A Advanced Power MOSFET FEATURES B ^D S S Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V


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    ssp4n90aavalan142003b32flo-220+300m1n7tb4142dd3b33d PDF

    SSP4N90AS

    Contextual Info: Advanced SSP4N90AS Power MOSFET FEATURES - 900 V ^D S on = 3 . 7 Q. B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge LO Avalanche Rugged Technology II Q ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V


    OCR Scan
    ssp4n90as PDF

    Contextual Info: Advanced SSP4N90A Power MOSFET FEATURES BVDSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V


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    ssp4n90a PDF

    250M

    Abstract: SSP4N90
    Contextual Info: N-CHANNEL POWER MOSFETS SSP4N90 FEATURES • Low er R d s o n • Im proved in d u c tiv e ru ggedness • Fast s w itc h in g tim e s • R ugged po ly s ilic o n ga te cell s tru c tu re • L o w e r in p u t c a p a c ita n c e • E xtended safe o p e ra tin g area


    OCR Scan
    ssp4n90o-220ib4142250m PDF

    SSP4N90A

    Contextual Info: Advanced SSP4N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 4 A ■ E xtended S afe O pe ra ting A rea


    OCR Scan
    ssp4n90ao-220 PDF

    SSP4N90

    Abstract: SSP4N90AS
    Contextual Info: Advanced SSP4N90AS P o w e r MOSFET FEATURES BV D S S — 900 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 4.5 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


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    ssp4n90aso-220ssp4n90 PDF

    Contextual Info: SSP4N90A A d van ced Power MOSFET FEATURES BVdss ~ 900 V • Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 5.0 £2 lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 u A (M a x ) @ VOS= 900V


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    ssp4n90ao-220100lc PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640 PDF

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Contextual Info: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


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    ssp4n55ssp6n55ssp7n55ssp4n60+11ssp6n60ssp7n60ssp3n70ssp4n70ssp5n70ssp3n80irf9511irf9z34ssp5n80irf9521irf9631 PDF

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


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    ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230airf1740irl244irf1740aks 0550irl244airfz34assh6n80airf634airfs750irfs640 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6diode 1n4001 50v 1.0a do-41 rectifier diodek*d1691make smps inverter welding machinetransistor ksp441n5402 spice modeltip122 tip127 mosfet audio amp PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158std2n52stp2na60buz102 equivalentssh6n80rfp60n06replacement for irl2203nbuz91 equivalentrfp60n06leirfp460 cross referencebuz91a equivalent PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    sc70-6sc75-6supersottm-3/sot-23power247tm+10flmp supersot-6complementary mosfets buz11fqd7p20fdg6316irf650fqp65n06irfs630fdg329nfdp2532fqpf6n80 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent PDF

    ssp11n60s5

    Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
    Contextual Info: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:


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    ssp11n60s5ssp2n90ao-220ab/to-220ssp2n80a+12o-204aa/to-3tip536tip538ssp11n60stw5n150svt6251sti3005st4n150sti-3007 astp8n90svt6060svt300-5 PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620 PDF