SSM6N70 Search Results

SSM6N7002AFU

Contextual Info: SSM6N7002AFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N7002AFU 高速スイッチング用 アナログスイッチ用 単位: mm 2.1±0.1 1 6 2 5 3 4 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 VDS 60

SSM6N7002BFU

Contextual Info: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM6N7002FU

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM6N7002FU

Contextual Info: SSM6N7002FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N7002FU 高速スイッチング用 アナログスイッチ用 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 3.3 Ω 最大 (@VGS = 4.5 V)

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

Contextual Info: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage

Contextual Info: SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOS SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 • Small package • Low ON-resistance 1.2±0.05 Symbol Rating Unit Drain-source voltage

SSM6N7002BFU

Contextual Info: SSM6N7002BFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ SSM6N7002BFU 高速スイッチング アナログスイッチ 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 • オン抵抗が低い 1.25±0.1

SSM6N7002BFU

Contextual Info: SSM6N7002BFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ SSM6N7002BFU 高速スイッチング アナログスイッチ 単位: mm 2.1±0.1 • 小型パッケージで高密度実装に最適 • オン抵抗が低い 1.25±0.1

SSM6N7002BFE

Contextual Info: SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 1.2±0.05 Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) 1.6±0.05 : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM6N7002AFU

Contextual Info: SSM6N7002AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002AFU High-Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON-resistance: RDS ON = 3.3 Ω (max) (@VGS = 4.5 V) 2.1±0.1 1.25±0.1 Symbol

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM6N7002BFU

Contextual Info: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage

Contextual Info: SSM6N7002AFU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N7002AFU 高速スイッチング用 アナログスイッチ用 単位: mm 2.1±0.1 1 6 2 5 3 4 記 号 定 格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧 VDS 60

Contextual Info: SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOSⅣ SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm 1.6±0.05 1.2±0.05 Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) 1.6±0.05 : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)

Contextual Info: SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type U-MOS SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm 2.1±0.1 • Small package • Low ON-resistance 1.25±0.1 Rating Unit Drain-source voltage

Contextual Info: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)

SSM6N7002BFE

Contextual Info: SSM6N7002BFE 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ SSM6N7002BFE 高速スイッチング アナログスイッチ 単位: mm 1.6±0.05 • 小型パッケージで高密度実装に最適 • オン抵抗が低い 1.2±0.05

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g