SSF4N90AS Search Results
SSF4N90AS Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSF4N90AS | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Original | 254.56KB | 7 | ||
| SSF4N90AS | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSF4N90AS | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.38KB | 6 |
SSF4N90AS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SSF4N90AS Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = 3 .5 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|iA Max. @ VDS = 900V |
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ssf4n90as | |
SSF4N90AS
Abstract: EL DRIVER 3-STAGE
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ssf4n90asib41420dm0201003b333+3 | |
SSF4N90ASContextual Info: Advanced SSF4N90AS P o w e r MOSFET FEATURES BV D S S — 900 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 3.5 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea |
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SSF4N90ASContextual Info: SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
ssf4n90as | |
SSF4N90ASContextual Info: SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
Original |
ssf4n90as | |
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Contextual Info: SSF4N90AS FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 900 V ^DS on = 3 . 7 Q. o ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V |
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ssf4n90as | |
D467Contextual Info: SSF4N90AS Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 n A M a x @ VOS = 900V ■ Low RDS(ON) : 3.054 i i (Typ.) |
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ssf4n90asd467 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
SSH6N80
Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
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mtm8n55o-204aa/to-3mtm8n60mtm8n40+13 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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ssr3055airfr014airfr024airfr034a+16 |