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    SPB11 Search Results

    SPB11 Datasheets (14)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPB-11
    3M Markers, Cables, Wires - Management, MARKER BOOK Original PDF 2
    SPB11N60C2
    Infineon Technologies Cool MOS Power Transistor Original PDF 161.93KB 14
    SPB11N60C2 SMD
    Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.38 ?, 11.0A Original PDF 164.09KB 12
    SPB11N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 156.67KB 15
    SPB11N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 357.21KB 14
    SPB11N60C3
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF 470.19KB 13
    SPB11N60C3ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A D2PAK Original PDF 463.89KB
    SPB11N60C3 SMD
    Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.38 ?, 11.0A Original PDF 195.57KB 14
    SPB11N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 278.26KB 12
    SPB11N60S5
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 22.0 A; Original PDF 354.67KB 11
    SPB11N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 338.2KB 12
    SPB11N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 139.62KB 10
    SPB11N60S5ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-263 Original PDF 350.78KB
    SPB11N60S5 SMD
    Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.38 ?, 11.0A Original PDF 142.04KB 10
    SF Impression Pixel

    SPB11 Price and Stock

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    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SPB11N60C3ATMA1 Cut Tape 1,157 1
    • 1 $4.18
    • 10 $2.75
    • 100 $1.94
    • 1000 $1.76
    • 10000 $1.76
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    SPB11N60C3ATMA1 Digi-Reel 1,157 1
    • 1 $4.18
    • 10 $2.75
    • 100 $1.94
    • 1000 $1.76
    • 10000 $1.76
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    SPB11N60C3ATMA1 Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $1.44
    • 10000 $1.44
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    Avnet Americas () SPB11N60C3ATMA1 Reel 15 Weeks 1,000
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    • 100 -
    • 1000 $0.75
    • 10000 $0.71
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    SPB11N60C3ATMA1 Bulk 1
    • 1 $3.66
    • 10 $2.92
    • 100 $2.16
    • 1000 $2.16
    • 10000 $2.16
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    Arrow Electronics SPB11N60C3ATMA1 Cut Strips 7 15 Weeks 1
    • 1 $0.33
    • 10 $0.33
    • 100 $0.33
    • 1000 $0.33
    • 10000 $0.33
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    Newark SPB11N60C3ATMA1 Bulk 468 1
    • 1 $2.19
    • 10 $2.01
    • 100 $1.86
    • 1000 $1.61
    • 10000 $1.61
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    Chip Stock SPB11N60C3ATMA1 8,350
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    EBV Elektronik SPB11N60C3ATMA1 16 Weeks 1,000
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    IBS Electronics SPB11N60C3ATMA1 2,000 1,000
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    • 1000 $0.98
    • 10000 $0.94
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    Vyrian SPB11N60C3ATMA1 655
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    3M Interconnect SPB-11

    WIRE MARKER BOOK 5.6X34.8MM 15EA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB-11 Bulk 45 1
    • 1 $27.86
    • 10 $23.68
    • 100 $20.13
    • 1000 $17.99
    • 10000 $17.99
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    Avnet Americas SPB-11 Bulk 2 Weeks, 3 Days 5
    • 1 -
    • 10 $21.18
    • 100 $18.57
    • 1000 $18.57
    • 10000 $18.57
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    Mouser Electronics SPB-11 15
    • 1 $26.88
    • 10 $23.54
    • 100 $21.07
    • 1000 $19.91
    • 10000 $19.91
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    Newark SPB-11 Bulk 5
    • 1 $29.47
    • 10 $29.47
    • 100 $24.26
    • 1000 $23.44
    • 10000 $23.44
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    Prem Magnetics Inc SPB-112

    FIXED IND 160UH 1.7A 145 MOHM TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB-112 Bulk 5
    • 1 -
    • 10 $7.70
    • 100 $6.55
    • 1000 $6.55
    • 10000 $6.55
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    Prem Magnetics Inc SPB-110

    FIXED IND 100UH 2.1A 92 MOHM TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB-110 Bulk 5
    • 1 -
    • 10 $7.70
    • 100 $6.55
    • 1000 $6.55
    • 10000 $6.55
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    Ruland Manufacturing Co Inc SPB-11-F

    11/16" STEEL SHAFT COLLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB-11-F Bag 1
    • 1 $16.13
    • 10 $16.13
    • 100 $16.13
    • 1000 $16.13
    • 10000 $16.13
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    SPB11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 PDF

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Contextual Info: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original
    SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 PDF

    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 PDF

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Contextual Info: SPI11N60S5 SPP11N60S5, SPB11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original
    SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5 PDF

    11n60s

    Abstract: 11n60 SMD CASE footprint
    Contextual Info: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


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    SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint PDF

    piezo buzzer

    Abstract: AWG 24 UL1007 Buzzer SPB11 PB11-PD12AWR
    Contextual Info: SPL Hong Kong Limited Rm 2507, 25/F, Prosperity Centre, 25 Chong Yip St., Kwun Tong, Kln., HK. Tel: 852-23426867 / 57 Fax: 852-23426847 Email: sales@spl-hk.com.hk www.buzzer.com.hk ; www.transducer.com.hk ; www.connector.com.hk Piezo Buzzer SPB11 series


    Original
    SPB11 PC009U-R PB11-PD12AWR /30cm] UL1007 piezo buzzer AWG 24 UL1007 Buzzer PB11-PD12AWR PDF

    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 PDF

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original
    SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Contextual Info: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11N60C3 transistor 11n60c3 PDF

    Contextual Info: SPP11N60S5, SPB11N60S5 SPI11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original
    SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 PDF

    Contextual Info: SPB11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5 PDF

    Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original
    SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3 PDF

    11n60c3

    Abstract: 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60
    Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


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    SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 11gerous 11n60c3 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60 PDF

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


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    SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 PDF

    68w Transistor smd

    Abstract: 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent
    Contextual Info: SPP11N60C2 SPB11N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.38 W · Extreme dv/dt rated


    Original
    SPP11N60C2 SPB11N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4295 11N60C2 Q67040-S4298 68w Transistor smd 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent PDF

    Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original
    SPB11N60C3 P-TO263-3-2 SPB11N60C3 Q67040-S4396 11N60C3 PDF

    Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original
    SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3 PDF

    11n60c3

    Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60
    Contextual Info: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60 PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5
    Contextual Info: SPB11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5 PDF

    11n60c3

    Abstract: transistor 11n60c3 Q67040-S4395 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Contextual Info: Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 Q67040-S4395 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 PDF

    11N60C3

    Abstract: 11N60C SPP11N60C3 transistor 11n60c3 AR1010
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 11N60C3 11N60C transistor 11n60c3 AR1010 PDF

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original
    SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 Q67040-S4295 11n60c2 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2 PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
    Contextual Info: SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original
    SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 Q67040-S4198 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5 PDF