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Balluff Inc


Balluff Inc BFO004F (BFO 18V-LDD-SMG-23-1) FIBER OPTIC, SERIES 18V, 0.6, 90 DEG OPTICS, HOUSING MATERIAL BRASS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	BFO004F (BFO 18V-LDD-SMG-23-1)	Bulk			1	1 $589.59 10 $589.59 100 $589.59 1000 $589.59 10000 $589.59	Get Quote
Balluff Inc BFO004H (BFO 18V-LDD-SMG-23-1,5) FIBER OPTIC, SERIES 18V, 0.6, 90 DEG OPTICS, HOUSING MATERIAL BRASS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	BFO004H (BFO 18V-LDD-SMG-23-1,5)	Bulk			1	1 $629.52 10 $629.52 100 $629.52 1000 $629.52 10000 $629.52	Get Quote

SMG231 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SMG2319P -2.1 A, -30 V, RDS ON 0.20  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.	Original	smg2319p sc-59 charge2319p 26-jul-2010	PDF
Contextual Info: SMG2314N 4A , 20V, RDS ON 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and	Original	smg2314n sc-59 27-jan-2011	PDF
SMG2310n Abstract: MosFET RDS 0,50 ID 1,8 A Contextual Info: SMG2310N 2.2A, 30V, RDS ON 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and	Original	smg2310n sc-59 11-feb-2011 mosfet +1rds 0,50 id 1,8 a	PDF
n fet 60v 3a Abstract: SMG2310 SeCoS Contextual Info: SMG2310 3A, 60V,RDS ON 90mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A The SMG2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.	Original	smg2310 sc-59 01-jun-2002 n fet 60v 3a +1secos	PDF
SMG2314 Contextual Info: SMG2314NE 4 A, 20 V, RDS ON 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and	Original	smg2314ne sc-59 27-jan-2011 smg2314	PDF
SMG2317P Abstract: JAN p-channel mosfet transistor low power Contextual Info: SMG2317P -0.9 A, -30 V, RDS ON 300 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss	Original	smg2317p sc-59 05-jan-2011 jan p-channel mosfet transistor low power	PDF
SMG2318N Abstract: MosFET Contextual Info: SMG2318N 1.2 A, 30 V, RDS ON 160 mΩ Ω N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to	Original	smg2318n sc-59 10-apr-2012 mosfet	PDF
SMG2310B Abstract: MosFET Contextual Info: SMG2310B 2.3A , 60V , RDS ON 100 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG2310B utilized advanced processing techniques to achieve the lowest possible on-resistance,	Original	smg2310b sc-59 2310b 30-jul-2013 +1mosfet	PDF
SMG2314N Abstract: MosFET Contextual Info: SMG2314N 5.3A , 20V , RDS ON 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low	Original	smg2314n sc-59 8-aug-2011 mosfet	PDF
SMG2314NE Abstract: MosFET Contextual Info: SMG2314NE 5.3 A, 20 V, RDS ON 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and	Original	smg2314ne sc-59 26-oct-2012 mosfet	PDF
SMG2319P Abstract: MosFET Contextual Info: SMG2319P -2.1A , -30V , RDS ON 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal	Original	smg2319p sc-59 12-apr-2011 mosfet	PDF
SMG2310A Contextual Info: SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS ON =115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the	Original	smg2310a sc-59 25capacitance width300 +124-nov-2009	PDF
2314 mosfet Abstract: sc 2314 c 2314 SMG2314 DL 2314 FET MARKING QG Contextual Info: SMG2314 3.5A, 20V,RDS ON 75mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314	Original	smg2314 sc-59 01-jun-2002 2314 mosfet +4sc 2314 c 2314 dl 2314 fet marking qg	PDF
SC 2313 Abstract: SC 2313 datasheet FET MARKING QG P-Channel Enhancement FET 2313-G SMG2313 Contextual Info: SMG2313 -2.5A, -20V,RDS ON 160mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A L The SMG2313 provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SMG231 is universally	Original	smg2313 sc-59 smg231 01-jun-2002 +5sc 2313 sc 2313 datasheet fet marking qg p-channel enhancement fet 2313-g	PDF

secos gmbh Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3	Original	sc-59 sgsr809-a sgsr809-b sgsr809-c +12sgsr809-d sgsr809-e secos gmbh smbj11ca sm4005a smbj130ca smbj14ca smbj16ca smbj160ca bzv55c6v2 bzv55c12 smbj13ca	PDF