SMG231 Search Results

Contextual Info: SMG2319P -2.1 A, -30 V, RDS ON 0.20  P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.

Contextual Info: SMG2314N 4A , 20V, RDS ON 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and

SMG2310n

Abstract: MosFET RDS 0,50 ID 1,8 A
Contextual Info: SMG2310N 2.2A, 30V, RDS ON 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and

n fet 60v 3a

Abstract: SMG2310 SeCoS
Contextual Info: SMG2310 3A, 60V,RDS ON 90mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A The SMG2310 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

SMG2314

Contextual Info: SMG2314NE 4 A, 20 V, RDS ON 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and

SMG2317P

Abstract: JAN p-channel mosfet transistor low power
Contextual Info: SMG2317P -0.9 A, -30 V, RDS ON 300 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss

SMG2318N

Abstract: MosFET
Contextual Info: SMG2318N 1.2 A, 30 V, RDS ON 160 mΩ Ω N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to

SMG2310B

Abstract: MosFET
Contextual Info: SMG2310B 2.3A , 60V , RDS ON 100 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG2310B utilized advanced processing techniques to achieve the lowest possible on-resistance,

SMG2314N

Abstract: MosFET
Contextual Info: SMG2314N 5.3A , 20V , RDS ON 32 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low

SMG2314NE

Abstract: MosFET
Contextual Info: SMG2314NE 5.3 A, 20 V, RDS ON 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and

SMG2319P

Abstract: MosFET
Contextual Info: SMG2319P -2.1A , -30V , RDS ON 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal

SMG2310A

Contextual Info: SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS ON =115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the

2314 mosfet

Abstract: sc 2314 c 2314 SMG2314 DL 2314 FET MARKING QG
Contextual Info: SMG2314 3.5A, 20V,RDS ON 75mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314

SC 2313

Abstract: SC 2313 datasheet FET MARKING QG P-Channel Enhancement FET 2313-G SMG2313
Contextual Info: SMG2313 -2.5A, -20V,RDS ON 160mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SC-59 A L The SMG2313 provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SMG231 is universally

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3