high power pulse generator with mosfet
Abstract: N and P MOSFET sgsp221
Contextual Info: r=7 SCS-THOMSON JM iM R D [E] Q E[L[i©ir[^(0)[iD(§S a p p lic a t io n n o t e A BRIEF LOOK AT STATIC dV/dt IN POWER MOSFETS INTRODUCTION The normal safe operating area o f POWER MOSFETS may be insufficient when used in very fast sw itching circuits, such as those required in
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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sgsp221
Abstract: P522 SGSP522 P5-22 P322 SGSP321 SGSP421 SGSP321/P322
Contextual Info: S ' r f F • , , • ; % G r - - Z , k riI \ -■ S-THOMSON ? D7E D — -5J. 73C 17363 S0SP22I/P222 3 • SGSP321/P322 SGSP421/P422 ■> i • . ' These products are diffused multi-cell silicon gate N-Channel enhancem ent mode Pow er-M os field effect transistors.
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S0SP22I/P222
SGSP321/P322
SGSP421/P422
SGSP221
SGSP321
SGSP421
SGSPS21
SP322
SP522
P522
SGSP522
P5-22
P322
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P478 mosfet
Abstract: P478 power mosfet IRC N and P MOSFET
Contextual Info: SGS-THOMSON ![L [I ¥ [M ^ D © Ì APPLICATION NOTE A BRIEF LOOK AT STATIC dV/dt IN POWER MOSFETS INTRODUCTION The norm al safe operating area o f POWER MOSFETS m ay be in s u ffic ie n t w hen used in very fa s t s w itc h in g c irc u its , such as those required in
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