SD142 Search Results

Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package «•* » 24° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

CK06BX104K

Abstract: M118 SD1423 SD1424 trasistors
Contextual Info: SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS . . . . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .230 6LFL M118 epoxy sealed ORDER CODE SD1423

SD1429

Abstract: M111 2SD1429
Contextual Info: SD1429 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

SD1422

Contextual Info: SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land

1420-002L

Abstract: ly062
Contextual Info: SD1420 Silicon Photodiode FEATU R ES • Compact, metal can coaxial package • 24 nom inal acceptance angle • W ide operating tem perature range (-55 C to +125 C) • M echanically and spectrally m atched to SE1450 and SE1470 infrared em itting diodes

Contextual Info: SD1429-03 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 15.0 WATTS GP = 7.5 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications.

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

Contextual Info: ÎZ T ^ SGS-THOMSON SD1423 7 # . RF"& MICROWAVE TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS • ■ . ■ ■ ■ 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION . P o u t — 15 W MIN. WITH 8.0 dB GAIN

SD1422

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION

H 122 TIF

Abstract: SD1420 SE1450 SE1470 silicon photodiode spectrally matched photodiode
Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF

SD1420

Abstract: SE1450 SE1470
Contextual Info: 17 September 1997 SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

diode t25 4 j5

Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420

Contextual Info: SGS’THOMSON SD1425 RiDD g^ lilL[lC§Tls3©R!lDÊi RF & MICROWAVE TRANSISTORS 800/900 MHz BASE STATION APPLICATIONS 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P out = 30 W MIN. WITH 7.5 dB GAIN

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION

Contextual Info: S G S -1 H 0 M S 0 N iL H C T M O g l SD1424 RF & MICROW AVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS > . . . . a - 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P o u t = 30 W MIN. WITH 7.5 dB GAIN

Contextual Info: SGS-THOMSON SD1423 $ 7 . H D « E lL E T M D IB i RF & MICROWAVE TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS • ■ ■ ■ ■ ■ ■ 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION P o u t = 15 W MIN. WITH 8.0 dB GAIN

SD1422

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION

Contextual Info: SD1423 RF POWER BIPOLAR TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS FEATURES SUMMARY • 800 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ CLASS AB LINEAR OPERATION ■ POUT = 15 W MIN. WITH 8.0 dB GAIN

sd 431 transistor

Abstract: SD1422 transistor c5 178 x1 transistor voltronics jr M111 VK200 UNELCO 2 SD 427 transistor
Contextual Info: H /tw If /lt f f S 140CommerceDrive 1 i t Montgomeryville, PA18936-1013 Tel: 215 631-9840 IVI II III I y Till a I a » I \ß W I I MM — _ SD1422 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450 - 512MHz CLASS C, MOBILE APPLICATIONS

CK06BX104K

Abstract: M118 SD1423 SD1424 M118 marking TSD1423 BS-902 as
Contextual Info: SD1423 RF POWER BIPOLAR TRANSISTORS 800-960MHZ BASE STATION APPLICATIONS FEATURES SUMMARY • 800 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ CLASS AB LINEAR OPERATION ■ POUT = 15 W MIN. WITH 8.0 dB GAIN

transistor power rating 5w

Abstract: SD1421 Thomson-CSF
Contextual Info: 04C D I S G S-THOMSON 7^5=123? OGGQGt.5 2 | D 7 SOLID STATE MICROWAVE! SD1421 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvilfe, PA 18936.» 1215 362-8500 • TWX 510-661-72.99 c. 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1421 is an NPN Silicon Epitaxial Planar Transistor that was

M122

Abstract: SD1420 SD1420-01
Contextual Info: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION P OUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING

Contextual Info: f Z 7 S G S -T H O M S O N SD1424 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS 800-900 MHz BASE STATION APPLICATIONS • . ■ . ■ . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION ■ P o u t = 30 W MIN. WITH 7.5 dB GAIN

Contextual Info: /T T SGS-THOMSON ^7# SD1420 RF & M I C R O W A V E T R A N S I S T O R S _ 8 0 0 - 9 0 0 M H z BASE S T A T I O N A P P L I C A T I O N S • . ■ . ■ . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION p OUT = 2.1 W MIN. WITH 9.0 dB GAIN