SBG1035 Search Results

SBG1030

Abstract: SBG1035 SBG1040 SBG1045
Contextual Info: SBG1030 thru SBG1045 Low VF Schottky Barrier Rectifiers Dimensions TO-263 D2PAK C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode SBG1030 SBG1035 SBG1040 SBG1045 Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 1. 2. 3. 4. Characteristics Gate

1040CT

Abstract: SBG1030CT SBG1035CT SBG1040CT SBG1045CT SBG1030CT-T-F
Contextual Info: SPICE MODELS: SBG1030CT SBG1035CT SBG1040CT SBG1045CT SBG1030CT - SBG1045CT 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip · Available in Lead Free Finish/RoHS Compliant Version Note 3 Guard Ring Die Construction for Transient Protection

SBG1040CT-T-F

Abstract: 1040CT SBG1030CT SBG1035CT SBG1040CT SBG1045CT
Contextual Info: SPICE MODELS: SBG1030CT SBG1035CT SBG1040CT SBG1045CT SBG1030CT - SBG1045CT 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip · Lead Free Finish/RoHS Compliant Note 3 Guard Ring Die Construction for Transient Protection

Contextual Info: SBG1030CT - SBG1045CT 10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: SBG1030CT SBG1035CT SBG1040CT SBG1045CT Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency

SBG1030

Abstract: SBG1035 SBG1040 SBG1045
Contextual Info: SBG1030 thru SBG1045 Low VF Schottky Barrier Rectifiers Dimensions TO-263 D2PAK C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode SBG1030 SBG1035 SBG1040 SBG1045 Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 1. 2. 3. 4. Characteristics Gate

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: LITE-ON SEMICONDUCTOR SBG1030CT thru 1045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SBL1040T

Abstract: SBL4040PT TO-247ad SBL530 SBL535 SBL540 SBL545 SBL550 SBL560 SBL830
Contextual Info: Schottky Barrier Diodes Low VF Schottky Barrier Diodes Tj=-40°C~+125C, Tjm=+125°C Òype VR=VRRM IFAV Electrical Characteristics IR @ VR=VRRM IFSM 125°C 125°C A mA mA V A SBL530 30 5 175 0.5 SBL535 35 5 175 SBL540 40 5 SBL545 45 SBL550 VFmax @ IFM Package Style

Contextual Info: LITE ON POWER SEMICONDUCTOR SBG1030CT thru 1045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES 2 D PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBRB1545CT

Abstract: MBRB1535 MBRB1535CT-T SBG1025L-F SBG1030CT-T-F SBG1030L-T-F SBG1045CT-T-F SBG1640CT-T-F SBG2035CT-T-F SBG1040CT-T-F
Contextual Info: Certificate of Compliance Company Name: Diodes Inc. Company Address: 3050 E. Hillcrest Drive, Westlake Village, CA Manufacturer Part Number MPN : RoHS Exemption 7 for High Temperature, High % Pb Solder Applied PLEASE SEE ATTACHED LIST To: Diodes Inc. Customer:

SBG1030

Abstract: SBG1035 SBG1040 SBG1045
Contextual Info: LITE-ON SEMICONDUCTOR SBG1030 thru SBG1045 REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

SBG1035CT

Abstract: 1045CT SBG1030CT SBG1040CT SBG1045CT
Contextual Info: LITE-ON SEMICONDUCTOR SBG1030CT thru 1045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

SBG1030

Abstract: SBG1035 SBG1040 SBG1045
Contextual Info: LITE-ON SEMICONDUCTOR SBG1030 thru SBG1045 REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: DISCONTINUED SBG1030CT - SBG1045CT 16A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • • • • • • • 2 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected