SA10S Search Results

torque

Abstract: delta phase angle SA10S20N SA10S20N-001 GCM2
Contextual Info: SA10S20N-001 Specifications ITEMS UNIT SA10S20N-001 Step Angle Degree 18 Number of Phase Phase 4 Drive System - Bipolar Voltage V 5 Winding Resistance Ohm 20 Detent Torque g-cm 3 Holding Torque g-cm 20 Rotor Inertia g-cm2 0.03 Weight g Approximately 5 Characteristics

DL161

Abstract: DL162 DL163 2233H
Contextual Info: Am42DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DS42515

Contextual Info: DS42515 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: Am49DL320BG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

d323gb90v

Abstract: AM29DL32XD DL322 DL323 DL324 Am29DL322
Contextual Info: Am29DL32xG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29DL320G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

d323db90v

Abstract: AM29DL32XD DL322 DL323 DL324
Contextual Info: Am29DL322D/323D/324D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

DL161

Abstract: DL162 DL163 56-Pin
Contextual Info: Am29DL16xD Data Sheet The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will continue to offer these products to existing customers.

D164C

Abstract: AM29DL163CT90 DL162 DL163
Contextual Info: PRELIMINARY Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

DL162

Abstract: DL163 A29DL163UV70F
Contextual Info: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Preliminary Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark

555H

Abstract: EN29F080
Contextual Info: EN29F080 EN29F080 8 Megabit 1024K x 8-bit Flash Memory FEATURES • 5.0V ± 10%, single power supply operation - Minimizes system level power requirements • Manufactured on 0.35 µm process technology • High performance - Access times as fast as 45 ns

AM29LV320DB90

Abstract: AM29LV320DT90
Contextual Info: PRELIMINARY Am29LV320D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Security on Silicon (SecSi Sector) — Current version of device has 64 Kbytes; future versions will have 256 bytes

Contextual Info: ADVANCE INFORMATION Am29DS163D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: FDC87W21 8111*0 STANDARD MICROSYSTEMS CORPORATION Power I/O Controller with Fast Infrared Support FEATURES • • • • 5 Volt Operation Plug & Play 1 .OA Com pliant Supports Eight IRQs, Four DMA Channels, 480 Relocatable Addresses Floppy Disk C ontroller FDC

AMD marking CODE flash AM29DL

Abstract: 29DL163
Contextual Info: A D V A N C E IN F O R M A T IO N AMD* Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • ■ ■ Simultaneous Read/Write operations

AM29F060

Abstract: AM29F060B
Contextual Info: •1H?•L:f*1!f»Av AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35(un process technology

CHINA TV uoc

Abstract: X886 Am29F08QB AM29F060
Contextual Info: AM D3 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation —- Minimizes system level power requirements ■ Manufactured on 0.35 |jm process technology

29DL323C

Abstract: 0C0000H 29DL323 29DL322 00001OXXX
Contextual Info: A D V A N C E IN F O R M A T IO N A M D * Am29DL322CAm29DL323C 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank while

Contextual Info: SN74LV4320A LOWĆPOWER, DUALĆSUPPLY, LEVELĆTRANSLATING CompactFlash INTERFACE WITH 16ĆBIT DATA, 11ĆBIT ADDRESS, AND 13ĆBIT CONTROL LINES SCES628A − APRIL 2005 − REVISED APRIL 2005 D Member of the Texas Instruments D D D D D Ioff Supports Partial-Power-Down Mode

S29JL032H

Contextual Info: S29JL032H 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development

DL322

Abstract: DL323 Am29DL32xCT
Contextual Info: ADVANCE INFORMATION Am29DL32xC 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

SD13

Abstract: SD14 SD15 SN74LV4320A SN74LV4320AGKFR sandisk tf
Contextual Info: SN74LV4320A LOWĆPOWER, DUALĆSUPPLY, LEVELĆTRANSLATING CompactFlash INTERFACE WITH 16ĆBIT DATA, 11ĆBIT ADDRESS, AND 13ĆBIT CONTROL LINES SCES628A − APRIL 2005 − REVISED APRIL 2005 D Member of the Texas Instruments D D D D D Ioff Supports Partial-Power-Down Mode

Contextual Info: A82DL32x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit

S29JL032J

Abstract: S29JL032 VBK048 S29JL032J60T jedec mo-142 dd S29JL032J60
Contextual Info: S29JL032J 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032J Cover Sheet Data Sheet (Preliminary) Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,