DL162 Search Results

Duracell

Abstract: CR1620 DLI620
Contextual Info: DURACELL SIZE DL1620 CR1620 Lithium Manganese Dioxide Battery SPECIFICATIONS Min. No Load Voltage 3.1V Min. On Load Voltage 2.1V on 150Q at 1s Rated Capacity 70mAh on 30k Q to 2V Min. Life 180Hrs on 6.8k Q to 2V Volume 0.4cm3 Weight 1.3g Typical Discharge

DL2032

Abstract: Duracell DL2032 DL2450 duracell cr2450 duracell CR2025 DL2025 DL2016 dl2025 cr2032 duracell CR2032 DL2430
Contextual Info: Lithium Coin Battery Duracell Batteries Lithium Duracell IEC ANSI Voltage Overall Ht.(MM) DL1025 DL1216 DL1616 DL1620 DL2016 DL2025 DL2032 DL2430 DL2450 CR1616 CR1620 CR2016 CR2025 CR2032 CR2430 CR2450 5009LC 5000LC 5003LC 5004LC 5011LC 5029LC 3.0 3.0 3.0

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

TLBI

Contextual Info: C 3 WC64P603EV-XQ3X WHITE /MICROELECTRONICS RISC 603e M ODULE, SECONDARY L2 CACHE ADVANCED * MAI N FEATURES • Based on R IS C 6 0 3 e 3 .3 V M icro p ro cessor ■ Footprint com patible w ith 603e [jp C Q FP package ■ ■ Processor C lo ck Frequencies: 66.6, 8 0 ,1 0 0 M Hz

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL161

Abstract: DL162 DL163 AM29DL164DT M4200
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL162

Abstract: DL163
Contextual Info: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Preliminary Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 History Issue Date Initial issue

Contextual Info: A82DL16x4T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit

DL162

Abstract: DL163
Contextual Info: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

A82DL1632TG-70UF

Abstract: DL1632
Contextual Info: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

164D48

Abstract: DL162 DL163 D163D
Contextual Info: DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

S29JL032

Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Contextual Info: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.

Contextual Info: Conventional Rectiier Power Transformers Chassis Mount SM Signal’s rectifier power transformers provide a wide variety of outputs. This series of conservatively designed transformers is manufactured using traditional materials and layer wound techniques.

DL802

Abstract: DL246 80VCT DL1050 36VCT 18VCT
Contextual Info: Conventional Rectifier Power Transformers • Chassis Mount SM Signal’s Rectifier Power transformers provide a wide variety of outputs. This series of conservatively designed transformers are manufactured using traditional materials and layer wound techniques.

Contextual Info: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit

Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations

A29DL163UV70F

Contextual Info: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue

Contextual Info: A82DL16x2T U Series Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash Memory and 2M (128Kx16 Bit) Static RAM Preliminary Document Title Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.

emcp 162

Abstract: DL10 DL12 emcp TEA 2111 WT111 eMCP qualification dh29 code
Contextual Info: WC64P603EV-XQ3X RISC 603e MODULE, SECONDARY L2 CACHE ADVANCED * MAIN FEATURES • Based on RISC 603e 3.3V Microprocessor ■ Processor Clock Frequencies: 66.6, 80, 100 MHz ■ Footprint compatible with 603e µp CQFP package ■ Bus Clock Frequencies: Up to 66.6 MHz

Contextual Info: ADVANCE INFORMATION DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

DL161

Abstract: DL162 DL163
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and