S153P Search Results

8464

Abstract: S153P
Contextual Info: S153P Vishay Semiconductors Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

Contextual Info: S153P Vishay Semiconductors Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

telefunken s153p

Abstract: 8464 S153P
Contextual Info: S153P Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation. The large active area combined with a flat case gives a

temic k 153 p

Abstract: S153P
Contextual Info: TELEFUNKEN Semiconductors S 153 P Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

S153P

Contextual Info: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

Contextual Info: Temic S153P S e m i t i n (t u ( t n r s Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a herm etically sealed short T O -5 package. Due to its flat, w aterciear glass w indow the device is sen­ sitive to visible and near infrared radiation.

S153P

Abstract: telefunken s153p
Contextual Info: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

Contextual Info: S153P Vishay Telefunken Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

Contextual Info: S153P Vishay Semiconductors Silicon PIN Photodiode Description S153P is a high speed and high sensitive PIN photodiode in a hermetically sealed short TO–5 package. Due to its flat, waterclear glass window the device is sensitive to visible and near infrared radiation.

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

BPW89

Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Contextual Info: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area

BPW 64 photo

Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

sil6400

Abstract: STS7500 s520 SSF4500 s7302
Contextual Info: Temic S e m i c « n il u c t o r s Genera] Information Alphanumeric Index T>pe . Type . BP 1 0 4 . . 6 .2 0 7 B P W 8 5 . . . . 320 T E M T 2 2 0 0 . . . 4 ,3 9 8 TSIP7601 . . . . B P V 1 0 . . 5 ,2 0 3

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

BORON

Abstract: BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA
Contextual Info: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future

near IR sensors with daylight filter

Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Contextual Info: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into

TSOP1738

Abstract: TDSR5150 TDSR5160 TDSR1160 TDSR3160 TDSR3150 TSOP1738 DATASHEET TLHG4400 tcst1300 BPW34 application
Contextual Info: Vishay Semiconductors Standard Packing Units Alphanumeric Index 4N25 Std. Pack. Units 3000 Alphanumeric Index BPX43–4 Std. Pack. Units 1000 4N25 G V 3000 BPX43–5 1000 4N26 3000 BPX43–6 1000 4N27 3000 CNY17(G)–1 3000 4N28 3000 CNY17(G)–2 3000 4N32

near IR sensors with daylight filter

Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Contextual Info: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into

BPW34 smd

Abstract: bpv10nf bpw43
Contextual Info: Tem ic S e m i c o n d u c t o r s Photo PIN Diodes Characteristics Package Photo Sensitive Area/tam2 I* !* Ira /fiA +A- @ k /u m W ns ® X = 820 om (Ee * l mW / cm2> R*. /12 (VR = Î0 V) Photo PIN Diodes in Clear Plastic Package e? BPW34 7.5 65° 50(>40)

TDS05160

Abstract: TDSR5150 TDS05150 TDS03160 TDSR5160 TSOP1738 TDS03150 TDS01150 TDSR3150 TSOP1838
Contextual Info: VISH A Y Vishay Telefunken Y Alphanumeric Index Type Page Type Page Type Page 4N25 30 CNY17 G -2 32 TCDT1103(G) 33 4N25(G)V 32 CNY17(G)3 32 TCDT1110(G) 4N26 30 CNY64 35 4N27 30 CNY64A 35 4N28 30 CNY64B 4N32 30 4N33 30 4N35 Type Page 32 TDSL1150 TDSL1160 18

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .