S0T186 Search Results

BDT64AF

Abstract: bdt64cr KIA 574 BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F
Contextual Info: BDT64F; BDT64AF J BPT64BF; BDT64CF SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.

BD947F

Abstract: BD943F BD943 BD944F BD945F BD948F
Contextual Info: BD943F; BD945F BD947F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S0T186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 948F 947F

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

diode BY229

Abstract: philips Power MOSFET Selection Guide BY229-400, fast recovery diode Philips Semiconductors Power Diodes Selection Guide BY229F800 by329x BY359-1500 PBYR2040CT BY459X-1500 Philips Semiconductors Selection Guide
Contextual Info: Philips Semiconductors Power Diodes Selection Guide Schottky Rectifiers The trend towards lower supply voltages In computers and high speed logic circuits has produced a need for rectifiers with very low forward voltages. The 20 V/ 25 V range of power schottky diodes is intended for use in d.c. To d.c.

PBYR1035B

Abstract: PBYR1535CT pbyr1525ct R1635 PBYR1525 BY329X
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Power diodes POWER SEMICONDUCTORS FAST RECTIFIER DIODES DAMPER DIODES type number package ' f (AV) v F ‘rr (V) max. (A) (V) (ns) BY229 BV229F BY229X BY329 BY329X BY359 200, 400, 600, 800 200, 400, 600, 800

FR4 epoxy glass 1.5mm substrate

Abstract: sheet metal press bending machine
Contextual Info: MOUNTING INSTRUCTIONS page Axial-leaded devices 562 SOT54 T092 563 SOT82 564 SOT78 (T0220AB); SOT186A 567 SOT223; SOT428; SOT4Q4 572 Philips Semiconductors Mounting instructions Axial-ieaded devices GENERAL DATA AND INSTRUCTIONS General rules Excessive forces or temperature applied to a diode may

BUK417-500B

Abstract: TOPFETs FETs T0-220AB mosfet BUK454-600 BUK617-500BE BUK551-100A PHILIPS MOSFET igbt Philips Semiconductors Selection Guide Igbts guide
Contextual Info: Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs V DS V @ ID (A) Rdsjon) (ß) Id w Selection Guide Pd (W) TYPE NUMBER TECH NO LO GY ENVELOPE SOT263 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50S TOPFET SOT263

Contextual Info: Philips Semiconductors High-voltage and Switching NPN Power Transistors ^ . Genaral TRANSISTOR RATINGS VCEmax The maximum permissible instantaneous Cut-off voltage between collector and emitter terminals when the emitter current is reduced to zero by means of a reverse emitter base voltage, i.e.