RFT1P06E Search Results

PED relay 8907

Contextual Info: RFT1P06E fC l H A R R IS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Features Description • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

Contextual Info: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are

RFT1P06E

Abstract: TB334 39e6
Contextual Info: RFT1P06E Data Sheet August 1999 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET File Number 4495.1 Features • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

SOT223 package

Contextual Info: RFT1P06E S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Features Description • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

RFD14N05 spice

Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
Contextual Info: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance

IRF510N

Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Contextual Info: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5

Power MOSFET p-Channel n-channel dual

Abstract: 2A 12v nChannel mosfet MOSFET 6A power mosfet 60V 2A MOSFET N-channel MOSFET ESD Rated Dual N-Channel 100V 8A N-Channel MOSFET mosfet p-channel 2A N_CHANNEL MOSFET 100V MOSFET
Contextual Info: interrii ^ | Small Outline Package Products | Pow er M O S FE T Products PAGE N-Channel Test Circuits and W aveform s. 8-3 P-Channel Test Circuits and W aveform s.

p06e

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT1 P06E /Subject (1.4A, 60V, 0.285 Ohm, ESD Rated, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, PChannel Power MOSFET, SOT223) /Creator () /DOCI NFO pdfmark T UCT ROD ACEMEN SIL P E T L OLE REP 8-INTER OBS ENDED 88 m 1 MM cations tersil.co

P06E

Abstract: RFT1P06E TB334
Contextual Info: CT T ODU CEMEN IL R P E A S T L R E P TE OL RE 88-IN om OBS ENDED 8 1 s OMM lication intersil.c RECSheet p @ p p Data December 2000 A NO p ta ral Cent ail: cen l l a C or em 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET [ /Title RFT1 P06E /Subject

complementary of irf830

Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Contextual Info: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3