TA49044 Search Results

Contextual Info: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

8A60V

Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

PED relay 8907

Contextual Info: RFT1P06E fC l H A R R IS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Features Description • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

RFD8P06E

Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model

RFD8P06E

Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

8A60V

Abstract: rfp8p06e
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are

FP8P06E

Abstract: 9l2i sclm PSPICE PLIC
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E fin H A R R IS U U S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D E C T 0 -2 2 0 A B • BA, 6 0 V • SOURCE^. r DS ON = 0.3 0 0 U

p06e

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT1 P06E /Subject (1.4A, 60V, 0.285 Ohm, ESD Rated, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, PChannel Power MOSFET, SOT223) /Creator () /DOCI NFO pdfmark T UCT ROD ACEMEN SIL P E T L OLE REP 8-INTER OBS ENDED 88 m 1 MM cations tersil.co

RFT1P06E

Abstract: TB334 39e6
Contextual Info: RFT1P06E Data Sheet August 1999 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET File Number 4495.1 Features • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

P06E

Abstract: RFT1P06E TB334
Contextual Info: CT T ODU CEMEN IL R P E A S T L R E P TE OL RE 88-IN om OBS ENDED 8 1 s OMM lication intersil.c RECSheet p @ p p Data December 2000 A NO p ta ral Cent ail: cen l l a C or em 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET [ /Title RFT1 P06E /Subject

Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

SOT223 package

Contextual Info: RFT1P06E S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Features Description • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,