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    D8P06 Search Results

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    D8P06 Price and Stock

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    Fairchild Semiconductor Corporation RFD8P06ESM9A

    Trans MOSFET P-CH Si 60V 8A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics RFD8P06ESM9A 1,847
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    Fairchild Semiconductor Corporation RFD8P06LE

    MOSFET P-Channel 60V 8A (Tc) IPAK
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    Rochester Electronics RFD8P06LE 7,200 1
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    • 100 $0.38
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    Harris Semiconductor RFD8P06E

    Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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    Rochester Electronics RFD8P06E 2,278 1
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    Harris Semiconductor RFD8P06ESM

    MOSFET P-Channel 60V 8A TO-252-3
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    Rochester Electronics RFD8P06ESM 414 1
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    Harris Semiconductor RFD8P06LE

    MOSFET P-Channel 60V 8A (Tc) IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFD8P06LE 1,753 1
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    D8P06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: P *3 3 S D8P06E, D8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


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    rfd8p06erfd8p06esmrfp8p06e0-300i2+549e-101e-3048e-442e-740e-3 PDF

    8A60V

    Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
    Contextual Info: D8P06E, D8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original
    rfd8p06erfd8p06esmrfp8p06e8a60v+3rfd8p06esm9atb334bv254 PDF

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
    Contextual Info: D8P06E, D8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model


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    rfd8p06erfd8p06esmrfp8p06eo-220ab+7o-251aa49e-101e-30rfd8p06esm9ais415bv202d8p06 PDF

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334
    Contextual Info: D8P06E, D8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original
    rfd8p06erfd8p06esmrfp8p06erfd8p06esm9a+1tb334 PDF

    8A60V

    Abstract: rfp8p06e
    Contextual Info: D8P06E, D8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


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    rfd8p06erfd8p06esmrfp8p06ean7254+18a60v PDF

    FP8P06E

    Abstract: 9l2i sclm PSPICE PLIC
    Contextual Info: D8P06E, D8P06ESM, RFP8P06E fin H A R R IS U U S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D E C T 0 -2 2 0 A B • BA, 6 0 V • SOURCE^. r DS ON = 0.3 0 0 U


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    rfd8p06erfd8p06esmrfp8p06e1e-30+848e-442e-740e-3fp8p06e9l2isclmpspiceplic PDF

    Contextual Info: D8P06E, D8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original
    rfd8p06erfd8p06esmrfp8p06e175oc+1tb334 PDF