Q01TI Search Results

scr tic 1060

Abstract: Diode LT 410 VD357 TIC 2460 SCR 400V 1000A 1RKT Thyristor snubber IRK.F200 50A KTF
Contextual Info: • In t G r n â t iO n S l INTERNATIONAL R E C T I F I E R S ] Rectifier FAST SCR I DIODE MÖSSMS2 Q01tiô30 MTS H I N R bSE D s e r i e s i r k . f 2 oo and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ ■ ■ ■ F ast tu rn -o ff th y ris to r

TOSHIBA 9097250

Contextual Info: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

.5J1

Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
Contextual Info: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power

Contextual Info: rm mL'fim HEW LETT PACKARD Low Current Bar Code Digitizer IC Technical Data HBCC-0500 • Compatible w ith HP Bar Code Sensors -HBCC-1570- 0.013 in. 0.33 mm -H B CC -1580-0.007 in. 0.185 mm -H B CC -1590-0.005 in. 0.13 mm • Ambient Light Rejection > 100 K Lux

ML2208CCJ

Contextual Info: MICRO LI NE AR bDT341fl DOQlflTM Sflb • ML S1E D October 1990 ”T * S I - 0 7 ¡ero Linear *O I p r e l im in a r y ML2200, ML2208 12-Bit Plus Sign Data Acquisition Peripheral GENERAL DESCRIPTION FEATURES Th e M L2200 and ML2Í208 Data Acquisition Peripherals D A P ,

Contextual Info: O K I Semiconductor M S M 6652-X X X /M S M 6653-X X X / M S M 6654-X X X /M S M 6655-X X X / M SM 6656-XXX_ Internal MASK ROM Speech Synthesis LSI GENERAL DESCRIPTION The M SM 6650 fam ily is a su ccesso r to the M SM 6375 fam ily that are speech synthesis LSIs w ith

Contextual Info: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8

Contextual Info: SONY _C X D 2 7 2 1 Q -1 Single-Chip Digital Signal Processor for Karaoke Description The CXD2721Q-1 is a Karaoke LSI suitable for use in video CD/LD/CD-G/CD and the like. A large capacity DRAM and AD/DA converters are built in, and a Karaoke mode providing simple surround and

Contextual Info: b24=lflES ' G G l b a f lT MITSUBISHI LSIs a M 5 M 4 4 2 2 5 6 J , L - 8 , - 1 0 ,- 1 2 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM M IT S U B IS H I DESCRIPTION The Mitsubishi M5M442256J,L is a high speed 1048576-bit Dual Port Dynamic Memory equipped with a 256K x 4

Contextual Info: Chapter 6 Specifications This chapter specifies the SI-64’s electrical and mechanical characteristics and is divided into the following sections: • Section 6.1, “AC Characteristics,” provides complete AC timing data. ■ Section 6.2, “Electrical Requirements,” provides operating conditions

ST chn 624

Abstract: chn 712 LSPM2 CHN 618 chn 631 chn 648 equivalent CHN 602 CHN 612 h724 MSM6588
Contextual Info: O K I Semiconductor MSM6588 M S M 6588 contents GENGERAL D ESCRIPTION . 568 FEATURES. 568

2SD1262

Abstract: panasonic 2SD
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A • Package Dimensions Unit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Medium Speed Power Switching Complementary Pair with 2S D 1262, 2SD 1262A I*- * l.lmax. 6.5max. ■ Features • High DC cu rre n t gain hFE