PDM41258 Search Results

Contextual Info: PARADIGM 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 , 20 and 25ns M il: 1 2 ,1 5 ,2 0 , 2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41258SA Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: PDM41258 256K Static RAM 64K x 4-Bit 1 Features Description • High speed access times Com’l: 7, 8, 10, 12 and 15 ns Ind’l: 8, 10, 12 and 15 ns The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x 4 bits. This product is produced in Paradigm’s proprietary CMOS technology which offers the designer the highest speed

Contextual Info: paradigm PDM41258 256K Static RAM 64K x 4-Bit Features Description □ High speed access times Com'l: 7, 8 ,10,12 and 15 ns Ind'l: 8 ,1 0 ,1 2 and 15 ns The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x 4 bits. Writing to this device is accomplished when the write enable WE

ZZZ3

Contextual Info: PARADIGM 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41258SA Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: PARADIGM TECHNOLOGY PARADIGM' INC 5GE D bTmCHO DDOQOn ö ¡PAT IT ^ ÎV IO 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com’l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20, 2 5 ,3 5 ,4 5 , and 55ns □ Low power operation

Contextual Info: PDM41258SA PDM41258LA PARADIGM' 256K Static RAM 64K x 4-Bit Features Description □ High speed access times Com'l: 8,10,12,15, 20 and 25 ns Ind'l: 10,12,15, 20 and 25 ns The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x4 bits. This product is

Contextual Info: PDM41258SA PDM41258LA PARAHGM' 256K Static RAM 64K x 4-Bit Features Description □ High speed access times Com'l: 8 ,1 0 ,1 2 ,1 5 ,2 0 and 25 ns Ind'l: 10,12,15, 20 and 25 ns The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x4 bits. This product is

Contextual Info: Paradigm ' bTMlCHG D 0 D 0 3 4 3 PDM41258SA PDM41258LA 256K Static RAM 64K x 4-Bit STO * P A T Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns Ind'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 , and 35ns The PDM41258 is a high performance CMOS static

Contextual Info: PDM41258 256K Static RAM 64K x 4-Bit Description Features n High speed access times Com’l: 7, 8, 10, 12 and 15 ns Ind’l: 8, 10, 12 and 15 ns n Low power operation typical - PDM41258SA Active: 400 mW Standby: 150 mW - PDM41258LA Active: 350 mW Standby: 25 mW

Contextual Info: PARADIGM 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41258SA Active: 400mW typ. Standby: 150 mW (typ.)

IPDM41258SA

Abstract: 52HA
Contextual Info: par ad km 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ H igh speed access tim es Com 'l: 1 0 ,1 2 ,1 5 , 20 and 25ns M i l : 1 2 ,1 5 , 20, 25, 35, 45, and 55ns □ Low pow er operation - PD M 41258SA Active: 400m W typ. Standby: 150 m W (typ.)

PD-23

Contextual Info: P A R A D I G M T E C H N O L O G Y INC ETE D • LTMICHQ OOOOQHS 1 ■ 256K Static RAM 64K x 4-Bit with Separate I/O T ‘ % ' 2 3 ' /O PDM41251S/L PDM41252S/L Features Description □ Separate data input and output pins □ High speed access times Com'l: 1 5 ,2 0 ,2 5 ,3 5 and 45ns

Contextual Info: PARADIGM Product Family MODULES Secondary Level Cache Modules Static RAM Modules • • • • • • • • PDM4M096S PDM4M096L PDM4M4030 PDM4M4040 PDM4M4050 PDM4M4060 PDM4M4110 PDM4M4120 512K x 8 Asynchronous (512K x 8 Asynchronous) (64Kx 32 Asynchronous)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

MT5C2568

Abstract: 16kx4 8833 256kx1 IDT7188 41024 84256 CY7C PDM41024 EDI88130
Contextual Info: SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. CYPRESS AUSTIN DESCRIPTION IDT AUSTIN DESCRIPTION CY7C 106 MT5C1005 256Kx40E IDT61298

24PIN

Abstract: MT5C2564-20 MT5C2564-25 MT5C2564-30 MT5C2564-35 MT5C2564-45
Contextual Info: 1142 5 6 K A m « tt £ CO -Í CMOS • ■ / + TAAC max ns TCAC max (ns) TOE max (ns) TOH min (ns) 12 S t a t i c > ? TOD max (ns) Vf RAM (6 5 5 3 6 x 4 ) TWP min (ns) TDS min (ns) TDH min (ns) TWD ■in (ns) TWî max (nsi V D D or V C C (V) 2 4 P I N m

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in

IDT CYPRESS CROSS REFERENCE

Abstract: CY7C
Contextual Info: ^ A I S M N SI M 1 C Ü M H t I OR. I NC. C ROSS R E F E R ^ ^ e 'g UIDE SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. DESCRIPTION