PD441 Search Results

81-096

Contextual Info: PD441 VISHAY Vishay Semiconductors PD441 Package Dimensions in mm 14437 Document Number 81096 Rev. 1.1, 24-Feb-04 www.vishay.com 1 PD441 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

PU4312

Abstract: PU4424 PU4215 PU4216 PU4219 PU4220 PU4310 PU4313 PU4314 PU4319
Contextual Info: - 322 - m m. Ta=25‘C , *EPIiTc= 25'C M PU4215 PU4216 PU4219 PU4220 PU4310 PÜ4311 PU4312 PU4313 PU4314 PU4S16 PU4319 PU4320 PU4325 PU4410 PTTA^I 1 PU4412 PD4413 PU4414 PU4416 PU4417 PU4418 PÜ4419 PU4420 PU4421 PU4422 PU4423 PU4424 PÜ4510 PU4511 PU4512

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,PD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Contextual Info: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡j P D 4 4 1 6 0 0 8 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The ,PD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡j P D 4 4 1 6 0 1 6 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The ,PD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ PD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.

CN17-3

Abstract: UL110-0520 ltc014 cn137 S29JL064H70TFI000H PMC71 CCC30 TC58FVM7B5BTG65 CN233 MT48LC16M16A2TG
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

smd code A9 3 pin transistor

Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
Contextual Info: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _¡jP D 4 4 1 6 0 0 4 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The ,PD4416004 is a high speed, low power, 16,777,216 bits 4,194,304 words by 4 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _/j P D 4 4 1 0 0 0 L - X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOSstatic RAM.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 1 0 0 0 L - X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ PD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,PD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of