PD23C4001E Search Results

23c4001

Abstract: Z107 uPD23C4001
Contextual Info: //PD23C4001E 524,288 x 8-BIT MASK-PROGRAMMABLE CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration The aiPC 23C4001 E is a 524,288-word by 8-bit static ROM fabricated with C M O S silicon-gate technology. Designed to operate from a single +5-volt power

D23C4001

Abstract: 23c4001 uPD23C4001EJ
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT J U P D 2 3 C 4 1 E J 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The /¿PD23C4001 EJ is a 4,194,304 bits 524,288 w ords by 8 bits m ask-program m able ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.

upd23c40

Contextual Info: I N E C ELECTRONICS INC 3ÛE D • b42?S25 00324ñb 1 ■ NECE /PD23C4001E 524,288 X 8-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. T" W - i s -is" Description Pin Configuration The /¡PD23C4001E is a 524,288-word by 8-bit static ROM fabricated with CMOS siiicon-gate technology and

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT uPD23C4001 EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The ¿¡PD23C4001 EJ is a 4,194,304 bits 524,288 w ords by 8 bits m ask-program m able ROM. The active levels of OE (O utput Enable Input) can be selected with mask-option.

uPD23C4001EJ

Abstract: UPD23C4001EJGW uPD23C4001 PD23C4001 PD23C4001EJ nec 40-pin plastic dip
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C4001EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The µPD23C4001EJ is a 4,194,304 bits 524,288 words by 8 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258