PC271 Search Results

IC-2952

Abstract: P12432EJ2V0DS00 ic2952
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC2715T 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW Vcc = 3.4 V, Icc = 4.5 mA TYP. • High power gain : 19 dB T Y P . @ f = 0.5 GHz

mPC339c

Abstract: UPC272C MPC277G UPC319G MPC393G upc272g UPC271ED 14 pin ic dip UPC311C UPC319C
Contextual Info: SELECTION GUIDE Operating D EV IC E O R IG IN A L Temperature Range Î/PC271C - 2 0 ~ +70 /PC271ED - 2 0 ~ +80 PC271G 311 PACKAGE - 2 0 ~ +70 8 Pin Molded DIP 8 Pin Cavity DIP Single High Speed Precision 8 Pin Molded Flat 0 ~ +70 8 Pin Molded DIP MPC311G

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC271OT 1.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain • Excellent frequency response: 1.0 GHz T Y P . @ 3 dB down below the gain at 0.1 GHz

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC2712T 2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 20 dB TYP. @ f = 1 GHz Excellent frequency response 2.6 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

PC271C

Abstract: PC271 PC311G2 PC311C 271G2 PC271G2 NEC PC271C PC311 g1242 UPC271
Contextual Info: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuits µ PC271,311 高性能コンパレータ PC271, 311は汎用オペアンプと同等の入力特性を有し，TTL, CMOS, HNIL等の標準ロジック回路を直接駆動でき

IC-2951

Abstract: mpc2714t C10535E VP15-00-3 C6650 P1243
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC2714T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW VCC = 3.4 V, ICC = 4.5 mA TYP. • High power gain : 11.5 dB TYP. @ f = 0.5 GHz

PC2710TB

Abstract: MPC2710 C1f TRANSISTOR P12152E
Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT JU P C 2 7 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The //PC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular

PC472K

Contextual Info: Molded Power Line Chokes AXIAL LEADED ABR A C O N C O R P O R A T I O 25M PC Series N € 25MPC Dimensions mm) Inductance Range. 3.9^h to 18,000nii Operating Temperature Range. -20°C to +140°C

PC3225

Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

PC2714

Abstract: PC271 PC2715 UPC2714
Contextual Info: 155 — ^ P C 2 7 1 4 e « * « * a i Tx = 25"C)• A í t í ^ - í > t r — r > X • ^ 'v i r - y 5 0 n ^ 7' : 6 f > 3 £ « [0 ]S & m * Œ * Ë W : 3.4V± 1 0 % Vcc 4 . IV Icc Pm 7 .5 m A Pd T op, : —4 0 — + 8 5 “C T stg : —5 5 — bl50°C

PC2710T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 271O T 1.0 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High po w e r gain 33 dB T Y P . @ f = 0.5 G H z • E xcelle nt fre q u e n cy response 1.0 G H z T Y P . @ 3 dB dow n be lo w the gain at 0.1 G H z

P12152E

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

IC-2951

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT /¿PC 2714 T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption 15 mW Vcc = 3.4 V, Icc = 4.5 mA TYP. • High power gain 11.5 dB TYP. @ f = 0.5 GHz

BYPASS Capacitors NEC

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 13 dB TYP. @ f = 1 GHz Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER PC2710T PC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB PC2710T • SATURATED OUTPUT POWER: +13.5(PC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE

uPC2708

Abstract: P12152E PC2708TB
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2708T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2708T is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This IC is packaged in minimold package.

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

rqw200n03

Abstract: 37GL53010-C1 L50RIO ITE8512E RQW200 L53II6 pll gl960 gl960 HCB1608KF-600T30 rqw130
Contextual Info: 5 Model : L53II6 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53080-C1F D D Intel Merom CPU + GL960 + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE

ITE8512E

Abstract: rqw200n03 L50RIO 37GL53010-C1 L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II
Contextual Info: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53110-C1 SMSC D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE

EMC4000

Abstract: MEC5004 MEC5004 ECE5018 ECE5018 dell inverter pinout isl6260 pinout dell battery HAL00 nvg72m macallan IV SIO pinout
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : HAL00 PCB NO : LA-2792 COMPAL P/N : 45135731L01 1 Travis DIS Schematics Document 2 2 uFCPGA Mobile Yonah Intel Calistoga + ICH7M 2006-01-20 REV : 1.0 (DELL: A00) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY MB PCB Part Number

852GM GMCH

Abstract: foxconn RTL8101L LA-2201 DCL5 Compal Electronics SOT23 AD13 compal ALVD tv frame buffer
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 DCL55 Schematics Document Banias ICP uFCBGA/uFCPGA Package with Montara-GM Core Logic 2003-12-29 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title PCBA M/B LA-2201 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.