PA28F008SA Search Results

SAL 41

Abstract: IC51-0442-1536
Contextual Info: CIC-44PS-40D-A6-YAM Rev 2 44-Lead PSOP to a 40-Pin DIP Mar-98 (EXAMPLES) PSOP DEVICES: PA28F008SA / SA-L / SC / S3 / S5 PA28F016SC / S3 / S5 SOCKET: PIN CONFIGURATION: BASE 40-Pin DIP PIN NAMES SOCKET 44-Lead PSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

IC51-0442-1536

Abstract: SAL 41
Contextual Info: CIC-44PS-40D-A6-YAM Rev 2 44-Lead PSOP to a 40-Pin DIP 7/97 (EXAMPLES) PSOP DEVICES: PA28F004SC / S3 / S5 PA28F008SA / SA-L / SC / S3 / S5 PA28F016SC / S3 / S5 SOCKET: PIN CONFIGURATION: BASE 40-Pin DIP PIN NAMES SOCKET 44-Lead PSOP 1 2 3 4 5 6 7 8 9 10

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

28F008SA

Abstract: E28F008SA E0000 SmartDie TB28F008SA
Contextual Info: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase

28F008SAT

Contextual Info: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

TB28F008SA-100

Abstract: psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl
Contextual Info: 28F008SA 8-MBIT 1-MBIT x 8 FlashFile TM MEMORY Extended Temperature Specifications Included Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

a56 transistor

Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor:

Contextual Info: ADVANCE INFORMATION 28F008SA 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY High-Density Sym m etrically Blocked Architecture — Sixteen 64 KByte Blocks • Very High-Performance Read — 85/90/120 ns Maximum Access Time ■ SRAM-Com patible W rite Interface Extended Cycling Capability

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

Contextual Info: in t e i A O W A t M ! D M F @ I^ ß iflÄ ¥ D fiO 28F008SA-L 8-MBIT (1 MBIT x 8 FLASH FI LETM MEMORY • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc ■ Extended Cycling Capability

28F008SA

Abstract: E28F008SA-120 E0000 PA28F008SA120 intel386sl SmartDie
Contextual Info: E PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

IQ80960RP

Abstract: MON960 80960RD GDB960 N28F020 PLX9060 8250 uart intel
Contextual Info: Product Release Notes MON960 Debug Monitor Release 3.2 These product release notes are divided into the following sections: • Product Checklist • Product Enhancements and New Features • Finding Updates to the Release Notes • IQ80960RD Evaluation Board Support

pioneer PAL 007 A

Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Contextual Info: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

PLCC pin configuration

Abstract: 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket
Contextual Info: SOCKET ADAPTERS CALIFORNIA INTEGRATION COORDINATORS Flash Programming Adapters • ■ ■ ■ ■ ■ ■ ■ ■ ■ Signal integrity - using 6 layer board design - decoupling capacitors optional High quality - durable and easy-touse sockets Long life - plug-in socket option

39BASE-0101

Abstract: 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Data I/O Corp. 10525 Willows Rd. NE Redmond, WA 98073 REF: Intel and Data I/O Corp. Test Services Agreement dated 08/15/95 Dear PROM Programmer Vendor: I am pleased to inform Data I/O Corp. that your PROM programming hardware and software has passed

E28F016SV-70

Abstract: E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 SMS Mikrocomputer Systeme GmbH Im Grund 15 D-88239 Wangen, Germany REF: Intel and SMS Mikrocomputer Systeme GmbH Test Services Agreement dated 05/08/96 Dear PROM Programmer Vendor:

82360SL

Abstract: 29042
Contextual Info: in t e ! 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included u High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks • Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

SmartDie

Abstract: 271296 ALi Corporation M1431
Contextual Info: in te i 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

report on PLCC

Abstract: TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM

Contextual Info: 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

29043

Abstract: PPD 3503
Contextual Info: intei A Ë > m M ! D M F @ IB IiM irD @ M ] 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64-K byte Blocks ■ Low -Voltage Operation 3.3V + 0 .3 V or 5.0V ± 10% Vc c ■ Extended Cycling Capability

TN80C196KC20

Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
Contextual Info: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.