NTE234 Search Results

300w power amplifier circuit diagram

Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
Contextual Info: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

ZENER 148 Datasheet

Abstract: IC 406
Contextual Info: NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified

NPN Transistor VCEO 80V 100V

Abstract: NTE2347
Contextual Info: NTE2347 Silicon NPN Transistor General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage IE = 0 , VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V

Contextual Info: NTE234 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

NTE2341

Abstract: npn darlington TO92 NTE2342
Contextual Info: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

audio Darlington 6A

Contextual Info: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching

NTE2349

Abstract: 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350
Contextual Info: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

NTE2348

Contextual Info: NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V

NTE2344

Abstract: nte2343 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE2343 NPN & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

NTE234

Contextual Info: NTE234 Silicon PNP Transistor Low Noise, High Gain Amplifier Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

Complementary Darlington Audio Power Amplifier

Abstract: audio Darlington 6A complementary npn-pnp power transistors darlington transistor for audio power application NTE2345 NTE2346 darlington complementary 120v
Contextual Info: NTE2345 NPN & NTE2346 (PNP) Silicon Complementary Transistors General Purpose Darlington, Power Amplifier Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT−82 type package designed for use in audio output stages and general amplifier and switching

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

NTE2360

Contextual Info: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10

NTE130

Abstract: NTE199 NPN RF Amplifier NTE241
Contextual Info: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)

NTE130

Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector

NTE199

Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge