NE461 Search Results

NE41634

Abstract: NE46134 2SC4536 AN-1001 NE46100 S21E 7100D
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST

NE46134

Abstract: NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel
Contextual Info: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST

transistor 224-1 base collector emitter

Abstract: transistor 0588
Contextual Info: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector

ic ca 747

Abstract: NE461M02 NE461M02-T1 S21E ic 5209
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 • LOW DISTORTION FIGURE: IM2 = 59 dB TYP at VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP at VCE = 10 V, IC = 50 mA

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

SOT89 Z100

Abstract: nec 8681 NPN transistor 1815 NE461M02 2sC5337
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION:

MJ 15007 transistor

Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

NE46134-T1

Contextual Info: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high

Contextual Info: NE46134 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)250m Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0

ne46134

Abstract: NE46134 equivalent ne461
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz

NE46100

Abstract: NE46134-T1-AZ NE46134 2SC4536 AN-1001 S21E transistor at 1438 6206 SOT-89 0821 p4tl3-010
Contextual Info: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

NE46134

Abstract: FRO 021 0027 2SC4536 AN-1001 NE46100 S21E
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST

HA 3089 1750

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • NE461M02 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 m A M AX • NEW HIGH GAIN POWER MINI-MOLD PACKAGE BOTTOM VIEW (S O T-89 T Y P E )

NE68018

Abstract: 814T
Contextual Info: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89

NE461M02

Abstract: 2SC5337 NE461M02-T1 S21E npn 1349
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

HFBR-0300Z

Abstract: HFBR-0400Z HFBR-1312TZ HFBR-2316TZ HFBR-2416Z HFBR2316TZ
Contextual Info: HFBR-0300Z Series HFBR-1312TZ Transmitter HFBR-2316TZ Receiver 1300 nm Fiber Optic Transmitter and Receiver Data Sheet Description Features The HFBR-0300Z Series is designed to provide the most cost-effective 1300 nm fiber optic links for a wide variety of data communication applications from

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

HFBR-4411

Abstract: HFBR-0300 HFBR-0400 HFBR-1312T HFBR-14XX HFBR-2316T HFBR-2416 HFBR-24X6
Contextual Info: 1300 nm Fiber Optic Transmitter and Receiver Technical Data HFBR-0300 Series: HFBR-1312T Transmitter HFBR-2316T Receiver Features • Low Cost Fiber Optic Link • Signal Rates over 155 Megabaud • 1300 nm Wavelength • Link Distances over 5 km • Dual-in-line Package PanelMountable ST* and SC

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社