MAR02 Search Results

Contextual Info: 4 THIS DRAWING IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED 19 BY AMP IN COR PO RA TE D. FOR ALL PUBLICATION RIGHTS 2 19 LOC RE SE R VE D . REVISIONS DI ST AF 50 LTR DESCRIPTION REV PER 0G3A-0113-02 DATE DWN APVD 0 1 MAR02 JR PD D D 1 CONTINUOUS

EIA-364-13

Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-98 connector "EIA-364-98"
Contextual Info: t if c a Electronics 1 0 8 -1 1 6 3 -6 Product Specification 01 Mar02 Rev A EC 0990-0325-02 Shielded Top Entry Compliant Pin Modular Jack 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Shielded Top Entry Compliant Pin Modular Jack.

Contextual Info: A B C D E G F H REVISIONS A2 A1 1 1.50 .059 HOUSING BLADE ALIGNMENT CORRECTION CORE OUT 22.91 .902 DESCRIPTION, ECN, EAR NO. DATE E FINAL DESIGN JAN11/11 APP'D F G UPDATED DESIGN EAR 13839 SPEC UPDATED (EAR 13936) MAR02/11 AUG23/11 S.M H TOLERANCES ADDED

ph74

Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Contextual Info: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo

Contextual Info: BAS 16W Silicon Switching Diode 3
For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage

Contextual Info: 3 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT RE LEA S E D BY TYCO ELECTRONICS CORPORATION. FOR A LL PUBLIC ATION RIG HTS 2 - , - LOC R E S ER V ED . D IS T HI REVISIO N: 00 D E S C R IP T IO N K REDW N/REV-EC D IM ENSIO NS ARE 0B40-0093-02 22M AR02

BA1 U14

Abstract: ARM920T AT91RM9200 ISO7816 AT91RM9200 SDRAM
Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor • • • • • • • • • • • • – 200 MIPS at 180 MHz, Memory Management Unit – 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer – In-circuit Emulator including Debug Communication Channel

Contextual Info: BAS 21-03W Silicon Switching Diode Preliminary data 2
For high-speed switching applications 1
High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR

48035

Contextual Info: 7 DRAWI NG MADE THIS IN THIRD DRAWI NG D ANGL E IS 0NP0BLI5HED. COPYRIGHT 6 5 <3> PROJECTION RELEASED BY 19 ANP FOR P O B L I C A T I O N I NCORP ORA T E D. ALL INTERNATIONAL 4 3 2 LOC , 19 RIGHTS DI 5T c RESERVED. REV I 5 I 0 N 5 53 ZONE LTR D E 5 C R I R T I ON

Contextual Info: T HI S D R A W I N G JÊL COPYRIGHT 15 U N PU BL ISH ED. 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP IN COR PORATED. , 7 19 6 4 5 3 2 DI ST LOC ALL R I G H T S RESER VED . GP REVISIONS 00 DESCRIPTION C REVISED PER EC 0513-0506-03 JR 1E M A R 0 4 JG

Contextual Info: MATERIAL: • H D U S IN G -P BT POLYESTER MIXED G L A S S U L-94 V-0 FIBER, STANDARD C D L D R - B L A C K • C D N T A C T S - 0 ,3 5 n n 18.10 13,30 THICK P H D S -B R D N Z E P L A T E D WITH 5 0 u ' HARD GUILD AND GUILD F L A S H IN S D LD ER AREA, CAVITY CDNFIRMS TD FCC RULES AND REGULATIDNS

integrated circuit MAR 521

Contextual Info: Preliminary IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D Short circuit withstand time – 10µs

BUP314D

Abstract: integrated circuit MAR 521
Contextual Info: Preliminary IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs

Contextual Info: EM78862C 8-Bit RISC Type Microprocessor Product Specification Doc. Version 1.9 ELAN MICROELECTRONICS CORP. March 2005 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.

K3750

Abstract: DB9 serial Connector pcb layout SMT6T jack p4 2.1mm C57B samsung u3 schematics processor ps2 female Connector pcb layout RS-232 DB9(F) connector footprint DB9 drawing SO32-4
Contextual Info: AT91EB40A Evaluation Board . User Guide Table of Contents Section 1 Overview. 1-1

Contextual Info: BAL 74 Silicon Switching Diode 3
For high-speed switching applications 2 1 3 VPS05161 2 EHA00001 Type Marking BAL 74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM

AT91RM9200 SDRAM

Abstract: AT91RM9200 at91rm9200qu ARM920T ISO7816 AT91RM9200 memory mapping AT91RM9200-CJ-002 AT91RM9200CJ 1768KS AT91RM9200CJ002
Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor – – – – • • • • • • • • • • • • • • • • 200 MIPS at 180 MHz, Memory Management Unit 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer In-circuit Emulator including Debug Communication Channel

NCP1204

Abstract: bipolar power transistor data NCP4000 SO32W NCP1450 dual zener common anode NCP801 DC-DC Step-Up Converter for White LED TSOP RECEIVER MOSFET P-CH 250V 5A
Contextual Info: Rev. 9, 2Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers Device CS5323 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. Gate Drive External On-chip Compliance VRM 9.0 VRM 9.0 Package SO-20W SO-28W Availability NOW May-02

transistor Bc 580

Abstract: TRANSISTOR BC 450 pnp transistor BC 660
Contextual Info: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data
For AF input stage and driver applications 3
High current gain
Low collector-emitter saturation voltage 1
complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration

MIL-STD1344A

Abstract: B067 MIL-STD-1344A
Contextual Info: SPECIFICATION SPEC. NO.： ： SPEC0004 DATE： ： Mar-02-2002 REV： PRODUCT NAME： ： B HEADER FEMALE 2.00mm R/A D/R DIP TYPE PRODUCT NO： ： 宣 B067 SERIES 得 股 SPEED 份 有 限 TECH 公 司 C O R P. 桃園縣龜山鄉民生北路㆒段 568 號 2 樓

AT91RM9200 memory mapping

Abstract: ARM920T AT91RM9200 ISO7816 OF SPI protocol D5202 AT91RM9200 SDRAM
Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor • • • • • • • • • • • • • • • • – 200 MIPS at 180 MHz, Memory Management Unit – 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer – In-circuit Emulator including Debug Communication Channel

71 SOT-23

Contextual Info: BCW 61, BCX 71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration

Contextual Info: BAS 16 Silicon Switching Diode 3
For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAS 16 A6s Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM

Q67040-S4520

Abstract: integrated circuit MAR 521
Contextual Info: Preliminary IKW40T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • C • • • • Best in class TO247 Short circuit withstand time – 10µs Designed for :