MSM514100 Search Results

bq785

Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

ZIP20-P-400

Abstract: msm514100c
Contextual Info: O K I Semiconductor MSM5141OOC/CL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100C/CL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514100C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514100C/CL is

Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

CA10

Abstract: MSM514100-10 MSM514100-8A msm514100
Contextual Info: 4bE D O K I M S M s e m i c o • b724SMQ 0 0 0 S S 7 7 2*10 « O K I J n d u c t o r T O K I 5 1 4 1 0 0 - y t - z t ' / SEMICONDUCTOR GROUP 4,19 4 ,3 0 4 -W Q R D x 1-BIT D YN A M IC RA M : FAST PAGE M O D E TYPE G EN ER A L DESCRIPTION The MSM514100 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.

Contextual Info: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESCRIPTION The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access Memory M odule composed of thirty-six 4-M b DRAM s in SOJ MSM514100B packages mounted

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

Contextual Info: O K I semiconductor MSM514100_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The MSM514100 is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The tech n o lo gy used to fab ricate the M SM 514100A/AL is O KI's CMOS silicon gate process

MSM514100D

Abstract: MSM514100DL
Contextual Info: E2G0022-17-41 ¡ Semiconductor MSM514100D/DL ¡ Semiconductor This version: Jan. 1998 MSM514100D/DL Previous version: May 1997 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate

MSM514100DL

Contextual Info: E2G0022-17-41 ¡ Semiconductor MSM514100D/DL ¡ Semiconductor This version: Jan. 1998 MSM514100D/DL Previous version: May 1997 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate

514100A

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
Contextual Info: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.

ZIP20-P-400

Abstract: OKI CMOS ina26
Contextual Info: O K I Semiconductor MSM5141 OOC/CL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100C/CL is a 4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514100C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514100C/CL is

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI G E N E R A L D E S C R IP T IO N MSM6791 can be used as a memory for which DRAM stores a voice data by connecting OKI solidstate recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)

ZIP20

Abstract: CA10
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MSM514100DL

Abstract: msm514100d
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

ci 555

Abstract: MN414100ASJ MT4C1004-7 20PIN MCM54100A-C70 MCM54100A-C80 MCM54101A-70 MCM54101A-80 MCM54102A-60 MCM54102A-70
Contextual Info: - fe ít £ PC TRAC ns) TRCY min (ns) max TCAD min (ns) TAH ein (ns) TP Y n am C R A M (4 19 4 3 0 4 X 1 ) m n tt min WCY rain •in TDH (ns) (ns) (ns) TRWC V D D or V C C I DD max (ns) (V) A M (ibA) I DD STANDBY ( I SB/ I SB2) OnA) VIL nax (V) 1N ta [*typ]

MSM6388

Abstract: J380 1h 514100A M6588 MSM6588 MSM6691 MSM6691GS-2K m514100a 529A1
Contextual Info: ¡ Semiconductor MSM6691 ¡ Semiconductor MSM6691 DRAM Interface IC GENERAL DESCRIPTION DRAMs can be used for voice storage by connecting the MSM6691 with OKI's integrate R/W Read/Write ICs, the MSM6388, and the MSM6588. The MSM6691 translates the signals

24 pin 16mbit DRAM

Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
Contextual Info: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)

darm

Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
Contextual Info: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)