MPSW14 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage Symbol Value Unit Vdc VCES 30 C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage

Contextual Info: ON Semiconductort MPSW13 MPSW14 One Watt Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10 Vdc Collector Current — Continuous

motorola 269-5

Abstract: MPSW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Vdc Collector-Emitter Voltage VCES 30 Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage Vdc

MPSW13

Abstract: MPSW14
Contextual Info: ON Semiconductort MPSW13 MPSW14 One Watt Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous

BC237

Abstract: transistor TO-92 bc108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 CASE 29–05, STYLE 1 TO–92 TO–226AE MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCES 30 Vdc

MPSW13

Abstract: MPSW14 MPSW63 MPSW64 power semiconductor 1973
Contextual Info: MPSW13 MPSW14 o 1 ONE WATT NPN DARLINGTON @ High DC Current hFE = Min MPSW13 = 10,000 (Min) MPSW14 V(BR)CES Breakdown Voltage — = 30 Vdc (Min) @ Ic = 100 pAdc @ Complementary MAXIMUM Gain @ Ic = 10 mAdc — 5,000 @ Collector-Emitter SILICON TRANSISTORS

mpsw

Contextual Info: MPSW13 MPSW14 M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VC E S 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage Vebo 10 Vdc Rating 'c 1.0 Ade Total Device Dissipation Ca T a = 25°C Derate above 25°C PD 1.0 8.0 Watt mwrc

Contextual Info: ON Semiconductort MPSW13 MPSW14 One Watt Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous

MPSW13

Abstract: MPSW14
Contextual Info: MOTOROLA Order this document by MPSW13/D SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCES 30 Vdc Collector – Base Voltage

Contextual Info: ON Semiconductort MPSW13 MPSW14 One Watt Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

CS5170

Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

MPSW13

Abstract: MPSW14 MPSW63 MPSW64
Contextual Info: ——— MPSW63 MPSW64 — ONE WATT PNP SILICON DARLINGTON AMPLIFIER TRANSISTORS @ High DC Current hFE = Gain @ Ic = 10 mAdc 5,000 Min MPSW63 10,000 (Min) MPSW64 @ Co[lector-Emitter 30 Vdc(Min)@ V(BR)CES= @ Monolithic Breakdown Voltage — — Ic= 100pAdc