MPSW06 Search Results

MPSW05

Abstract: mpsw06 102k1k
Contextual Info: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage

Contextual Info: MOTOROLA Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage

MPSW05

Abstract: MPSW06
Contextual Info: ON Semiconductort MPSW05 MPSW06* One Watt Amplifier Transistors NPN Silicon *On Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage

MPSW06G

Abstract: MPSW06 MPSW06RLRA MPSW06RLRAG MPSW05 MPSW05G Marking code mps
Contextual Info: MPSW05, MPSW06 MPSW06 is a Preferred Device One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating MPSW05 MPSW06 VCEO

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06 * NPN Silicon 'Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector- Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage

IC 2910

Abstract: MPSW06
Contextual Info: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector −Emitter Voltage VCEO 60 80 Vdc Collector −Base Voltage VCBO 60 80 Vdc Emitter −Base Voltage

1P NPN

Abstract: 3843 3843 application note MPSA06 MPSW06
Contextual Info: SEMICONDUCTOR MPSW06 NPN General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 33. See M PSA06 for characteristics. Absolute Màximum RStinQS T A = 2 5 ° C unless o th e rw ise noted

Contextual Info: ON Semiconductort MPSW05 MPSW06 One Watt Amplifier Transistors NPN Silicon MPSW06 is a Preferred Device MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage

Contextual Info: MPSW06 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)250m

MMBTA06

Abstract: MPSW06
Contextual Info: MPSA06/MPSW06/MMBTA06 N AT L SEMI CONO DISCRETE 11E D | t S D 1 1 3 D _0 0 3 7 E t . a T-27-05 CTH National æ j Semiconductor M PSW 06 M PSA06 ¥ U E 0 UU Bc M M BTA06 ^ iß IIIHl 10-92 t TUG/10100-1 UH BC B | TO-236 S01' 23 T0-226AE TUG/10100-6 „L/G/10100-4

Contextual Info: MPSW05 MPSW06* MAXIMUM RATINGS Symbol Rating MPSW05 MPSW06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage v CBO 60 80 Vdc Emitter-Base Voltage v EBO 4.0 Vdc Collector Current — Continuous *C 500 mAdc Total Device Dissipation f« T a = 2 5 X

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon ‘Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol MPSW05

MPSW06

Abstract: MPSW05 MPSW05G MPSW06G MPSW06RLRA MPSW06RLRAG
Contextual Info: MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 MPSW06 VCEO 60 80 Vdc Collector −Base Voltage

ic 3843

Abstract: ic 3843 datasheet MPSW06 MPSA06
Contextual Info: MPSW06 C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

ANSI Y14.5

Abstract: MAL100
Contextual Info: MPSW05 MPSW06 NPN ONE WATT SiLICON AMPLIFIER TRANSISTORS designed for use as medium-power @ High Collector-Emitter V BR CEO = 60 Vdc (Min) = 80 Vdc (Min) @ Low Collector-Emitter vCE(sat) I Collector-Base Voltage Emitter-Base Voltage ~‘ Total Power Dis~@$$:@

Contextual Info: S E M IC O N D U C T O R MPSW06 NPN General Purpose Amplifier T his device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 33. See M PSA06 for characteristics. Absolute Maximum RâtinÇjS Symbol

MPSW05

Abstract: MPSW06
Contextual Info: MOTOROLA Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage

Contextual Info: SEM ICONDUCTOR MPSW06 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

MPSW06 equivalent

Abstract: BC237 Motorola MPSA42
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage

Contextual Info: MPSW05 MPSW06* M A X IM U M RATINGS Symbol Rating MPSW05 MPSW06 Unit Collector-Emitter Voltage v CEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc v E BO 4.0 Collector Current — C o ntin uo us •c 500 m A dc Total Device Dissip ation a T a = 25°C Derate above 2 5 T

Contextual Info: MPSA06/MPSW06/MMBTA06 National Semiconductor WA Jum MPSA06 MPSW06 MMBTA06 [C / \ j / / / M iJlilJ ////// /ffiy m E„ \ 0$ TO-2 3 6 /m / / # TO - 226AE r //// V T° - 92 U TL/G/10100-1 S0T- 23 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -d NPN General Purpose Amplifier

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MPSW06

Abstract: BDC01D MPSW05 BDC01
Contextual Info: ON Semiconductort BDC01D One Watt Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol BDC01D Unit Collector–Emitter Voltage VCEO 100 Vdc Collector–Base Voltage VCBO 100 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous

24V 20A SIEMENS battery charger

Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
Contextual Info: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.