2N339IA
Contextual Info: Low Level and General Purpose Amplifiers TY PE NO. PO LA R IT Y M A X IM U M R A T IN G S CA SE Pd m W Ic (m A ) VcEO (V) H FE m in m ax Ic (m A ) V ce V CE(sat) m ax (V) (V) It m in Cob m ax Ic (m A ) (M H z) (M H z) N .F. m ax (dB ) MPSD06 MPSD56 N
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MPS9631
Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12
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TRANSISTOR 1003
Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
Contextual Info: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)
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mpsa43cmpsd01cmpsd02cmpsd03c+10mpsd04cmpsd05cd33d26cd33d27cd33d29cd33d30ctransistor 1003mpsu45d16p1cd33d21c
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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2sc 9015
Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
Contextual Info: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+
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bcw86o-92fbcy56bcy57+12bcy58bcy592sc 90152sc644cs90152n4248scr 4059transistor mps 6518mpsa092sc9232n35502sc644 transistor
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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TRANSISTOR 1003
Contextual Info: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C
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g0g35tmpsa43cmpsd01cmpsd02c+7mpsd03cmpsd04cmpsd05cmpsd06cmpsl01cmpsu45ctransistor 1003
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TRANSISTOR 1003
Abstract: ic 1003
Contextual Info: AL LE GRO M I C R O S Y S T E M S 8514019 SPRAGUE. INC =53 D • 050433Ö S E M I C O N D S / ICS GQD3Sb7 1 *ALGR ^0 9 3D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4l30524l3056wiring diagram audio amplifier ic 6283germanium+8transistor shortform datasheet & cross referenceshalbleiter index transistor2n5160 motorolatransistor itt 29071n51592n 5574inverter welder 4 schematicdiagrams de ic lg 8838
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gk 106
Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
Contextual Info: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A | V CE (V) max (V) 'c (mA) MPS3608 MPS3707
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bgt170q0107mo-92agk 106+4bchlmicro electronics ltd transistortransistor to-106 422mps6566 transistor
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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transistor 2n35632n3819 cross reference2sk302sa726+62sk41e2sc1026transistor 2sc14172sa10262sc2259bc150 transistor
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MPSD06
Abstract: MPS-D06 MPS-D56 MPSD56
Contextual Info: MPS-D06 NPN SILICON MPS-D56 PNP C O M P L E M E N T A R Y S ILIC O N A N N U L A R C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S T R A N S IS T O R S . . . designed fo r use in low voltage am plifier/driver circuits. • Excellent L E D Segment Driver
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1n1001n100a1n1011n102+161n1031n1041n1081n1111n1121n1131n45481n4008diode 1n40081n4008 diode1n1744a1n41481n523b2n4418bax151n5428
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TIS90
Abstract: T1S97 TIS92 V/mpsa09
Contextual Info: Low Level and General Purpose Amplifiers MAXIMUM RATINGS V e to Pi Ic mW (mA) (V) H,"E VcE (V) max (V) Ic (mA) 2 10 10 0.1 10 10 10 10 5 5 0.5 0.4 0.4 0.5 0.5 50 10 10 10 10 300 # 500 300 # 700 300 1 10 1 0.1 1 5 5 5 5 5 0.5 0.5 0.5 10 10 10 - - 0.3 100
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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mpsa18
Contextual Info: SPRAGUE/SEMICOND GROUP T3 85 14 0 19 SPRAGUE. D • ÔS13ÛS0 OGOBSTH S E M I C O N D S / ICS 1 ■ 93 D 0 3 5 9 2 X> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain ^CBO Device
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MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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