MMBT642 Search Results

MMBT6426

Abstract: MMBTA12 MMBTA13 MMBTA14
Contextual Info: This Surface Mount Transistors NATL Darlington Transistors— NPN VCEO V EBO V Min (V) Min MMBT6426 TO-236 (49) 40 40 MMBTA12 Its TO-236 (49) MMBTA13 MMBTA14 •c e s * ■CBO @ VCB @ hpE (j*A) Max (V) Min 12 0.05 30 20.000 30.000 20.000 20 10 0.1 15 TO-236

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

MMBT6427

Contextual Info: MMBT6427 NPN Transistors Darlington Amplifier COLLECTOR 3 * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead Pb -Free EMITTER 2 MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage

Contextual Info: Shandong Yiguang Electronic Joint stock Co., Ltd SEMICONDUCTOR MMBT6428LT1 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Amplifier Transistors Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo

2AK TRANSISTOR

Contextual Info: MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage

Contextual Info: Amplifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO 50 45 Vdc Collector–Base Voltage V CBO 60 55 Vdc Emitter–Base Voltage V Collector Current — Continuous

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 C0LLE CT0R 3 EMITTER 1 2 M AXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit C ollector-Em itter Voltage VCEO 50 45 Vdc C ollector-B ase Voltage VCBO 60 55 Vdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 M AXIMUM RATINGS Rating C o llector-E m itter Voltage Symbol Value Unit Vdc Vdc v CEO 40 C o llecto r-B ase Voltage VC B O 40

Contextual Info: M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage Rating v CEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage v EBO 12 Vdc *C 500 m Adc Collector Current — Continuous MMBT6427LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB Collector 3

SOD123

Abstract: marking pa sot-363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO

BCV47

Contextual Info: BCV27 IS OBSOLETE PLEASE USE MMBT6427 BCV47 IS CURRENTLY ACTIVE BCV27 BCV47 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 ✪ FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES – BCV27 – BCV28 BCV47 – BCV48 E C

marking code transistor m1l

Abstract: MMBT6429LT1G MMBT6428LT1G MMBT6428 MMBT6428LT1 MMBT6429 MMBT6429LT1
Contextual Info: MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage

Contextual Info: SMD Darlington Transistors Part No. MMBTA13 MMBTA14 MMBT6427 20070515 VCE sat & VBE(sat) hFE @ VCE & IC fT @ VCE & IC Pack@ IC & I B VCEO IC Device age Polarity Marking VCE IC Max. Max. IC IB Min. Max. VCE IC Code Min. Max. 7" (V) (A) (V) (mA) (V) (V) (mA) (mA) (MHz)(MHz) (V) (mA) Reel

MMBT6428

Contextual Info: MMBT6428 MMBT6428 NPN General Purpose Amplifier 3 • This device designed for general pupose amplifier applications at collector currents to 300mA • Sourced from process 10. 2 1 SOT-23 Mark: 1K 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted

Contextual Info: MMBT6426 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20k h(FE) Max. Current gain.200k

Contextual Info: MMBT6428LT1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m

MMBT6428LT1G

Abstract: MMBT6429LT1G MMBT6428 MMBT6428LT1 MMBT6429 MMBT6429LT1 6428L
Contextual Info: MMBT6428LT1, MMBT6429LT1 Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage VCEO 50 45 Vdc Collector −Base Voltage

NPN 300 VOLTS vce POWER TRANSISTOR

Abstract: SMMBT6427LT1G
Contextual Info: MMBT6427LT1G, MMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

Contextual Info: ON Semiconductort MMBT6428LT1 MMBT6429LT1 Amplifier Transistors NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage VCEO 50 45 Vdc Collector −Base Voltage VCBO 60 55 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC

Contextual Info: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous

KSH200

Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Contextual Info: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP