MG100Q2YS40 Search Results

MG100Q2YS40

Contextual Info: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max)

MG100Q2YS40

Contextual Info: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

Diode SE-05

Abstract: MG100Q2YS40
Contextual Info: TOSHIBA MG100Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 00 2Y S40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 - FAST-ON-TAB #1 10 • • • • • • High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

Contextual Info: T O SH IB A MG100Q2YS40 TOSHIBA GTR MODULE M r ; 1 n n SILICON N CHANNEL IGBT n ? Y < ; z L n Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 - ¿’A S T - O N - T A B # 1 1 0 • • High Input Impedance High Speed : tf=0.5/^s Max.

TRANSISTOR 2108A

Abstract: 2108A SE 566 IC
Contextual Info: TOSHIBA M G100Q2YS40 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG100Q2YS40 U n it in mm H IGH PO W ER S W IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. • H igh In p u t Im pedance • H igh Speed : 4- F A S T - O N - T A U #1 1U

Contextual Info: MG100Q2YS40 TOSHIBA MG100Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . 4 - F A S T -O N -T A B #1 10 • • High Input Impedance

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬

MG200J2YS21

Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Contextual Info: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9

MG150N2YS40

Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

MG75J2YS40

Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
Contextual Info: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40