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    MEL82 Search Results

    MEL82 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MEL82
    Micro Electronics NPN SILICON TRANSISTOR Scan PDF 98.24KB 2
    MEL82
    Micro Electronics Semiconductor Device Data Book Scan PDF 33.55KB 1

    MEL82 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MEL82

    Abstract: MI38T
    Contextual Info: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination


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    MEL82 MI38T 20mW/cm3 100ohm PDF

    MEL82

    Abstract: MI38T MIB38T MIB38T-K
    Contextual Info: MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.


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    MI38T MIB38T MIB38T-K) MI38T MIB38T MEL82 MIB38T-K PDF

    MEL82

    Abstract: MI38T MIB38T MIB38T-K
    Contextual Info: ORO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type Ieadframe, MI38T & MJB38T are mechanically and spectrally matched to the MEL82 series photo transistor.


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    MI38T MIB38T MIB38T-K) MI38T MIB38T MJB38T MEL82 100mA MIB38T-K PDF

    MEL82

    Abstract: MI38T MIB38T MIB38T-K
    Contextual Info: CRO MI38T MIB38T MIB38T-K INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor.


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    MI38T MIB38T MIB38T-K) MI38T MIB38T MEB38T MEL82 100mA MIB38T-K PDF

    MAL100

    Abstract: MEL12 CL138 MEL31 MEL32 transistor case To 106 FPT100 FPT100A FPT100B FPT110
    Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30


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    CL138 O-106 FPT100 O-106 FPT100A FPT100B FPT110 FPT110A MAL100 MEL12 MEL31 MEL32 transistor case To 106 PDF

    MEL12

    Abstract: MAL100 transistor case To 106 mel32 photo transistor CL138 FPT100B MEL11 MEL11A FPT100 FPT110
    Contextual Info: Photo Transistor TYPE NO. MAXIMUM RATINGS POLARITY IL ID Pd IC VCEO mA (mW) (mA) (V) MIN MAX H CASE VCE MAX VCE (mW/cm2) (V) (nA) (V) PACKAGE NO. CL138 N* 300 100 18 15 80 2 3 1000 5 TO-106 1-66 FPT100 FPT100A FPT100B N N N 100 100 100 25 25 25 30 30 30


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    CL138 O-106 FPT100 O-106 FPT100A FPT100B FPT110 FPT110A MEL12 MAL100 transistor case To 106 mel32 photo transistor MEL11 MEL11A PDF

    Contextual Info: MIB38T-K MI38T-K MI 3 8 T & MIB38T are GaAlAs infrared emitting d i o d e m olded in a flangless 3mra 0 clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, it has an narrow radiation angle m e a s u r e d from the optical axis to the half


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    MIB38T MI38T MEL82 MI38T-K MIB38T-K 100mA PDF

    MEL12

    Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
    Contextual Info: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A


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    CL138 O-106 FPT100 FPT100A FPT100B FPT110 FPT110A O-106F FPT110B MEL12 MAL100 MEL31 MEL32 mel32 photo transistor MEL11 PDF

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357 PDF

    Contextual Info: IUI I • I U ■ I D ■ I DARLINGTON TRANSISTOR I DESCRIPTION S>2.97<0.117> MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / N \ 4. <0.16 T


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    MDL82 MEL82) 100ohm MDL82 PDF

    MEL82

    Abstract: MI38T
    Contextual Info: NPN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 M EL82 is NPN silicon p lanar ph o to ­ transistor. It is encapsulated in a 3m m diam eter, low profile and r 4*1 • (0.16) flangeless water clear transparent epoxy package. It features sensitivity,


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    MEL82 MI38T 20mW/cm2 PDF

    L303A

    Abstract: DL78 L 31A MA1515 EL79D
    Contextual Info: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a


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    ML303 ML303B ML308 ML308A L-303a -308C MEL78 MEL78D MEL79 EL79D L303A DL78 L 31A MA1515 PDF