MBRF2060C Search Results

mbrf2060ct

Contextual Info: LITE-ON SEMICONDUCTOR MBRF2060CT REVERSE VOLTAGE - 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES B M DIM. K C A A B C D D E PIN 1 2 3 F E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection

Contextual Info: LITE-ON SEMICONDUCTOR MBRF2060CT REVERSE VOLTAGE - 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES M B DIM. D A C K PIN 1 2 J I MECHANICAL DATA H N H L Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams

Contextual Info: Data Sheet Customer： Product : High Power Schottky Diode Part No.: MBRF2040CT/MBRF2060CT/MBRF20100CT/MBRF20150CT MBRF20200CT/MBRF20250CT Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH

MBRF2060CT

Contextual Info: SEMICONDUCTOR MBRF2060CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=60V. K Fast Reverse Recovery Time : trr=35ns.

2060ct

Abstract: MBRF2060CT MBRF2060
Contextual Info: SEMICONDUCTOR MBRF2060CT MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K MBRF 2 2060CT 016 No. Item Marking Description KEC K KEC CORP. Device Name Lot No. 2007. 7. 27 3 Revision No : 0 MBRF MBRF2060CT

Contextual Info: Order this data sheet by MBRF2060CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCHM ODE S c h o ttk y P o w e r R e c tifie rs M B R F20 60C T Motorola Preferred Device The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a

MBR2060CT

Abstract: MBRF2060CT
Contextual Info: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBR2060CT/MBRF2060CT Construction : Schottky Barrier Rectifier Application : For General Purpose （Manufacturer）: Suzhou Goodark Electronics Co.,Ltd

Contextual Info: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBRF2060CTG Construction : : Schottky Barrier Rectifier Application : For General Purpose （Manufacturer）: Suzhou Goodark Electronics Co.,Ltd Prepared on Sep. 17th, 2008

b2060

Abstract: 221D-03
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

MBRF2060

Abstract: 2035CT 2045CT 2050CT 2060CT MBRF2035CT MBRF2060CT 2060C
Contextual Info: MBRF2035CT THRU MBRF2060CT Isolation 20.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 20.0 Amperes ITO-220AB Features .185 4.7 Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

Contextual Info: MBRF2050CT AND MBRF2060CT SCHOTTKY RECTIFIER VOLTA GE RANGE - 50 and 60 Volts CURRENT - 20.0 Amperes FEATURES ~ ITO-220CT ♦ Isolated Plastic package has Underwriters Labora­ IlH I 9 3 4 H V V -0 U tory Flammability Classification o r it y ^ ^ ♦ Metal to silicon rectifier, majority^

BRF2060CT

Abstract: B2060 F2060CT motorola b2060 f2060ct diode
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M B R F2060CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

Contextual Info: MOSPEC MBRF2060CL Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The properitary barrier technology allows for

Contextual Info: MBR2045CT - MBR2060CT / MBRF2045CT - MBRF2060CT Green 20A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits MBR2045CT / MBRF2045CT Per Leg VRRM (V) IO (A) 45 10 VF (MAX) (V) @ +25°C 0.64 IR (MAX) (mA) @ +25°C 0.1 MBR2060CT / MBRF2060CT (Per Leg)

Contextual Info: Pr el i MBRF2035CT THRU MBRF2060CT mina ry Isolation 20.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 20.0 Amperes ITO-220AB Features a a a a a a a a .185 4.7 MAX Plastic material used carries Underwriters Laboratory Classifications 94V-0

MBRF2035CT

Abstract: MBRF1035 MBRF1045 MBRF2045CT MBRF2050CT MBRF2060CT
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MBRF2035CT THRU MBRF2060CT SCHOTTKY ISOLATED PLASTIC RECTIFIER Reverse Voltage - 35 to 60 Volts FEATURES ITO-220AB ¨ Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 ¨ Dual rectifier construction, positive center tap

SE 110

Contextual Info: S EM IC O N D U C T O R MBRF2060CT TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE SW ITC H IN G M O D E POW ER SUPPLY A PPLICATIO N. C O N V E R T E R & CH O PP E R A PPLICATION. FEA T U RE S • A verage O utput R ectified C urrent DIM : Io=20A . • R epetitive Peak R everse V oltage

B2060g

Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

k mbrf20

Abstract: MBRF2060C
Contextual Info: MOSPEC MBRF2030C Thru MBRF2060C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

motorola b2060

Abstract: b2060 Motorola BRF206 brf2060
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S cho ttky Pow er R ectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features

Contextual Info: SENSITRON SEMICONDUCTOR MBRF2050CT MBRF2060CT Technical Data Data Sheet 3060, Rev. A MBRF2050CT/MBRF2060CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection Features: • •

Contextual Info: SENSITRON SEMICONDUCTOR MBRF2050CT-G MBRF2060CT-G Technical Data Data Sheet 3475, Rev. Green Products MBRF2050CT-G/MBRF2060CT-G SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection

Contextual Info: SENSITRON SEMICONDUCTOR MBRF2050CT MBRF2060CT Technical Data Data Sheet 3060, Rev. MBRF2050CT/MBRF2060CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection Features: • • •

Contextual Info: LITE-ON SEMICONDUCTOR MBRF2060CT REVERSE VOLTAGE - 60 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES M B DIM. K C A A B C D D E PIN 1 2 3 F E G J F Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection