MBRF2030C Search Results

MBRF2030CT

Abstract: 2045CT MBRF2040CT MBRF2045CT
Contextual Info: LITE-ON SEMICONDUCTOR MBRF2030CT thru 2045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ITO-220AB M B D A C K PIN 1 2 3 E G I MECHANICAL DATA H N H L Case : ITO-220AB molded plastic Polarity : As marked on the body

Contextual Info: LITE-ON SEMICONDUCTOR MBRF2030CT thru 2045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES B ITO-220AB M D A C K PIN 1 2 3 E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection

k mbrf20

Abstract: MBRF2060C
Contextual Info: MOSPEC MBRF2030C Thru MBRF2060C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

MBRF20150CT

Abstract: MBRF20150 2040ct MBRF2030CT 20100CT 20150CT 2050CT 2060CT 2080CT mbrf 20150CT
Contextual Info: MBRF2030CT thru MBRF20150CT REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ●Metal of silicon rectifier , majority carrier conduction .138 3.5 .122(3.1) .118(3.0) .102(2.6) ●Guard ring for transient protection

MBRF2060C

Abstract: k mbrf20 MBRF2050C-60C
Contextual Info: MOSPEC MBRF2030C Thru MBRF2060C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MOSPEC MBRF2030C Thru MBRF2060C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: MOSPEC MBRF2030C Thru MBRF2060C Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide

Contextual Info: MBRF2030CT thru MBRF20150CT REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ●Metal of silicon rectifier , majority carrier conduction ●Guard ring for transient protection ●Low power loss,high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR MBRF2030CT thru 2045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ITO-220AB M B DIM. K D A C A B C PIN 1 2 G H whelling,and polarity protection applications J F G I J K

MBRF2030CT

Abstract: 2045CT MBRF2040CT MBRF2045CT
Contextual Info: LITE-ON SEMICONDUCTOR MBRF2030CT thru 2045CT REVERSE VOLTAGE - 30 to 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES B ITO-220AB M D A C K PIN 1 2 3 E Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection

f2020ct

Abstract: F2060CT F20100CT f2020c F2040CT MBRF20100CT F2030CT F2045CT MBRF2030CT SCHOTTKY 20A 40V
Contextual Info: MCC MBRF2020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBRF20100CT










Features • • • • • 20 Amp Schottky Low Power Loss High Efficiency Low Forward Voltage , High Current Capability

mbrf20100ct

Abstract: MBRF2030CT MBRF2060CT
Contextual Info: MCC MBRF2020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBRF20100CT










Features • • • • • 20 Amp Schottky Low Power Loss High Efficiency Low Forward Voltage , High Current Capability

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V