MBR340 Search Results

MBR340

Abstract: 200Reverse
Contextual Info: Bulletin PD-20593 rev. B 03/03 MBR340 SCHOTTKY RECTIFIER 3.0 Amp Description/ Features Major Ratings and Characteristics Characteristics MBR340 Units IF AV Rectangular 3.0 A 30/40 V IFSM @ tp = 5 µs sine 430 A VF 0.6 V - 40 to 150 °C waveform VRRM @ 3 Apk, TJ = 25°C

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

MBR340M

Abstract: MBR320M MBR330M 0450B
Contextual Info: MBR320M MBR330M MBR340M SCHOTTKY BARRIER R EC TIFIERS HOT CARR IE R POWER R EC TIFIERS 3 AMPERE 20, 30, 4 0 V O LTS . . . e m p lo y in g the S c h o ttk y B arrier p rin c ip le in a large area m etal-to -s ilic o n p o w er d io d e. S ta te o f th e a rt g eo m etry features e p ita x ia l c o n stru ctio n w ith o x id e passiva­

MBR320

Abstract: mbr340 MBR330
Contextual Info: MBR320 ~ MBR340 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free

Contextual Info: MBR340P Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)95Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)9.4

Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

MOTOROLA B360

Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
Contextual Info: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

MBR340

Abstract: B340 MBR340RL
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

MBR340

Abstract: MBR340G MBR340RL MBR340RLG
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

Contextual Info: MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 3.0 Amperes CURRENT FEATURES 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop

1N5B22

Abstract: lm 5821 IN5822
Contextual Info: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M M O T O R O L A I) ij s iy ; n ( * r ^ D a t a S h e p i S C H O T T K Y B A R R IE R A X I A L LE A D R E C T IF IE R S . . e m p lo yin g power diode. oxid e in The S c h o t t k y B arrier S tate-of-the-art

MBR340

Abstract: MBR340G MBR340RL MBR340RLG
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

MBR340

Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR340 Single Anode General Description: 40 V 3 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

Contextual Info: VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

MBR360

Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MBR 340 SCHOTTKY DIE SPECIFICATION TYPE: MBR340 RSingle □Dual Anode General Description: 40 V 3 A (Low Ir) SYM ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) IFAV Average Rectified Forward Current Maximum Instantaneous Forward Voltage

Contextual Info: MOTOROLA Order this document by MBR340/D SEMICONDUCTOR TECHNICAL DATA A xial Lead R ectifier MBR340 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with

MBR340

Contextual Info: MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 3.0 Amperes CURRENT FEATURES 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop

MBR360

Abstract: motorola b330
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

rectifier diode 3A

Contextual Info: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: Bulletin PD-20593 rev. C 12/04 MBR340 SCHOTTKY RECTIFIER 3.0 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 3.0 A 30/40 V IFSM @ tp = 5 µs sine 430 A VF 0.6 V - 40 to 150 °C waveform VRRM @ 3 Apk, TJ = 25°C

MBR340

Abstract: B340 MBR340RL
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MBR340

Abstract: C-16
Contextual Info: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance