MBR340RLG Search Results

MBR340RLG Datasheets (1)

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On Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBR340RLG		On Semiconductor	3A 40V Schottky Rectifier	Original	PDF	63.06KB	4

MBR340RLG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	mbr340 mbr340/d mbr340g mbr340rl +1mbr340rlg	PDF
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	mbr340 mbr340g mbr340rl mbr340rlg	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	mbr340 mbr340/d	PDF
MBR340 Abstract: MBR340G MBR340RL MBR340RLG Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	mbr340 mbr340/d mbr340g mbr340rl +1mbr340rlg	PDF
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,	Original	mbr340 mbr340/d	PDF