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    MBR20020 Search Results

    MBR20020 Datasheets (15)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBR20020
    Micro Commercial Components 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Original PDF 124.74KB 3
    MBR20020
    Transys Electronics SCHOTTKY DIODES MODULE TYPE 200A Original PDF 119.69KB 2
    MBR200200CT
    GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 100A 2 TOWER Original PDF 505.37KB
    MBR200200CTR
    GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 100A 2 TOWER Original PDF 505.37KB
    MBR20020CT
    America Semiconductor HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF 1.02MB 2
    MBR20020CT
    GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER Original PDF 3
    MBR20020CT
    Micro Commercial Components 200 Amp Rectifier 20 to 100 Volts Schottky Barrier Original PDF 417.95KB 3
    MBR20020CT
    Micro Commercial Components 200 Amp Schottky Barrier Rectifier 20 Volts Original PDF 80.96KB 3
    MBR20020CT
    Transys Electronics SCHOTTKY DIODES MODULE TYPE 200A Original PDF 132.59KB 2
    MBR20020CT
    America Semiconductor MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF 249.55KB 1
    MBR20020CTL
    Motorola European Master Selection Guide 1986 Scan PDF 26.74KB 1
    MBR20020CTL
    Motorola Switchmode Datasheet Scan PDF 34.92KB 1
    MBR20020CTR
    America Semiconductor HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF 1.02MB 2
    MBR20020CTR
    GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 200A 2TOWER Original PDF 3
    MBR20020CTR
    America Semiconductor MBR20020 - HIGH POWER-SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF 249.55KB 1
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    MBR20020 Price and Stock

    Navitas Semiconductor

    Navitas Semiconductor MBR200200CT

    - Bulk (Alt: MBR200200CT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    Navitas Semiconductor MBR200200CTR

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    Navitas Semiconductor MBR20020CT

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    Navitas Semiconductor MBR20020CTR

    - Bulk (Alt: MBR20020CTR)
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    MBR20020 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 200 A Features • High Surge Capability • Types from 20 to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    MBR20045CT

    Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT
    Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original
    mbr20020ctmbr200100ct200ampmbr20040ct+5mbr20045ctmbr20080ctmbr20060ctmbr20035ctmbr20030ct PDF

    bys75-50

    Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT
    Contextual Info: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT


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    357b-01mbr20020ctlbys75-30mbr20030ctl+9mbr6535mbr7535mbr8035mbr12035ctmbr20035ctmbr30035ctbys75-50mbr6545bys75-45 PDF

    MBR20080

    Abstract: MBR200100 MBR20020 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060
    Contextual Info: Transys MBR20020 R THRU MBR200100(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE G Maximum Ratings D Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


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    mbr20020mbr200100200ampmbr20030+5mbr20035mbr20040mbr20045mbr20060mbr20080 PDF

    MBR200100CT

    Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
    Contextual Info: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


    Original
    mbr20020ctmbr200100ct200ampmbr20035ct+5mbr20030ctmbr20040ctmbr20045ctmbr20060ctmbr20080ct PDF

    MBR60035CTL

    Abstract: MBR20030CTL MBR20025CTL MBR30050CT MBR20015CTL
    Contextual Info: M O T O R O L A SC D I O D E S / O P T O 3TE D B b 3 b ? 2 5 5 GGfl30D4 M • M 0 T 7 T ^ 3 -cl *Iq , A V ERA G E RECTIFIED FO RW ARD C U R REN T (Amperes) 200 300 600 3570-01 PO W ER TAP O-W-i 0+H° V r RM (Volts) 15 MBR20015CTL 20 MBR20020CTL 25 MBR20025CTL


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    ggfl30d4mbr20015ctlmbr20020ctlmbr20025ctl+6mbr20030ctlmbr30035ctmbr60030ctlmbr60035ctlmbr30045ctmbr30050ct PDF

    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+2mbr20040ct175se PDF

    MBR200150CT(R)

    Abstract: Twin Tower
    Contextual Info: MBR200150CT R DACO SEMICONDUCTOR CO., LTD. THRU MBR200200CT(R) SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V RRM Twin Tower A Maximum Ratings R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150


    Original
    mbr200150ctmbr200200ct200ampmbr200150ct(r+1twin tower PDF

    200100CT

    Abstract: MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT
    Contextual Info: MCC MBR20020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR200100CT Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


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    mbr20020ctmbr200100ctmbr20030ctmbr20035ct+9mbr20040ctmbr20045ctmbr20060ctmbr20080ct200100ctmbr20080ct-200100ctmbr20020ct-20045ct20020-20045ct20045ct PDF

    AV200A

    Contextual Info: MCC MBR20020 THRU MBR200100   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton


    Original
    mbr20020mbr200100mbr20030mbr20035+5mbr20040mbr20045mbr20060mbr20080av200a PDF

    MBR20020CT

    Abstract: MBR20030CT MBR20035CT MBR20040CT
    Contextual Info: MBR20020CT thru MBR20040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    MBR20030CTL

    Abstract: MBR20025CTL R20025C
    Contextual Info: MOTOROLA SC DIODES/OPTO b3fci72SS □0flb3Lci DSb b4E D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR20015CTL MBR20020CTL MBR20025CTL MBR20030CTL POWERTAP SWITCHMODE Power R ectifiers . . using the S chottky B arrier prin ciple w ith a platin um barrier metal. These stateof-the-art devices have the fo llo w in g features:


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    b3fci72ssmbr20015ctlmbr20020ctlmbr20025ctl+2mbr20030ctlr20025c PDF

    Contextual Info: MBR200150CT thru MBR200200CTR Silicon Power Schottky Diode VRRM = 150 V - 200 V IF AV = 200 A Features • High Surge Capability • Types from 150 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original
    mbr200150ctmbr200200ctrmbr200200ct PDF

    MBR200100

    Abstract: MBR20020 MBR20030 MBR20035 MBR20040 MBR20045 MBR20060 MBR20080
    Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR20020 R THRU MBR200100(R) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE G Maximum Ratings D Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175


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    mbr20020mbr200100200ampmbr20030+5mbr20035mbr20040mbr20045mbr20060mbr20080 PDF

    MBR20020CT

    Contextual Info: Naina Semiconductor Ltd. MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original
    mbr20020ctmbr20040ctrmbr20030ctmbr20035ct+1mbr20040ct PDF

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Contextual Info: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


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    o-247nq045403cnq080403cnq100+1660cnq045sl61cnq045sl62cnq030sl63cnq100sl69cnq135sl69cnq150slmbr20030ctlmbr20050ctmbr30050ctmbr30045ctmbr20015ctl200cnq030244nmbr1605spd115417afst30045 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan
    sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


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    atv5030atv5090batv6031atv6060h+15atv7050bal99lt1bas16lt1bas21lt1bav70lt1bav74lt1mled96brx49 scrmrf549mrf660mrf548mmbr2857lt1cr2428mpf3822mrf548 motorola PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special PDF