MB83512 Search Results

MB83512

Abstract: ACTIV8 MB83512-15
Contextual Info: Preliminary MOS Memories V MB83512-15 F U J IT S U CMOS 524,288-Bit Mask-Programmable Read Only Memory D escription The Fujitsu MB83512 is a CMOS Si-gate mask-programmable static read only memory organized as 65,536 words by 8-bits. The MB83512 has TTL-compatible I/O and TRI-state output level

Contextual Info: P re lim in a ry FU JITSU MOS Memories Y • MB83512-15 CMOS 524,288-Bit Mask-Programmable Read Only Memory D escription The Fujitsu MB83512 is a C M O S Si-gate mask-programmable static read only memory organized as 65,536 words by 8-bits. The MB83512 has TTL-compatible I/O and TRI-state output level

MB83512

Abstract: MB83512-15 mb83 MB83s
Contextual Info: Prelim inary FUJITSU M O S M e m o rie s V M B 8 3 5 1 2 -1 5 CMOS 524,288-Bit Mask- Program mabl e Read Only Memory D e s c r ip tio n T he Fujitsu MB83512 is a C M O S Si-gate m ask-program m able static read only m em ory organized as 65,536 words by 8-bits.

Contextual Info: - ^ ^ - ^ ^ E I c r R Ö t o ^ r ' i E l 37W ta Prelim inary MOS Memories B MB83512-15 CMOS 524,288-Bit Mask-Programmable Read Only Memory M B « » D escription The Fujitsu MB83512 is a CMOS Si-gate mask-programmable static read only memory organized as 65,536 words by 8-bits.

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264