MAT04 Search Results

Contextual Info: MAT04AY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MAT04FY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MAT04BY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MAT04EY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: Matched Monolithic QuadTransistor MAT04 ANALOG DEVICES □ PIN CONNECTIONS FEATURES • • • • • • • Low Offset Voltage. 200nV Max High Current G ain. 400 Min

Contextual Info: MAT04FS Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

TRANSISTOR na 44

Abstract: MAT04 MAT04RC
Contextual Info: MAT04RC MATCHED MONOLITHIC QUAD TRANSISTOR FEATURES mm DIM a b c min 8.69 8.69 1.63 • • • • Low offset voltage: 200µV Max. High Current Gain: 400 Min. Excellent Current Gain Match: 2% Max. Low Noise Voltage at 100Hz, 1mA: 2.5nVÖ Hz Max. • Excellent Log Conformance: RBE = 0.6W Max.

Contextual Info: MAT04FP Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MAT04EP Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MAT04GS Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

rosemount 118mf

Abstract: 2N4393 capacitor 106 35K sensor rosemount 118mf 106 35K CA3096 LT2078 LT2078ACS8 LT2079
Contextual Info: LT 2078/LT 2079 Micropower, Dual and Quad, Single Supply, Precision Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION SO Package with Standard Pinout Supply Current per Amplifier: 50µA Max Offset Voltage: 70µV Max Offset Current: 250pA Max

kt 784

Abstract: antilog amplifier "logarithmic amplifier" LM194 MAT02FH op07 ic metal package datasheet sy-15 8c 617 transistor I2 200-5 MAT02
Contextual Info: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀

ADsc901

Abstract: ad896 dac210gx op44fz pm248 ad513 CMP05GP AC1343 DAC02ACX1 AD2020
Contextual Info: Part # 0A09 102 106 107 108 110 118 120 12040 141 142 143 146 148 149 153 16002 16014 16015 16016 16033 161 163 165 170 171 171 180 183 184 184 1S10/20 1S14/24/44/64/74 1S40 1S60 Description ? ? ? ? ? ? ? FET Op-Amp OP-AMP 14-bit RDC 16-bit RDC Form-Func. Repl.

MAT02FH

Abstract: mat02specifications OP07 "direct replacement" MAT02 MAT02A MAT02E MAT02EH MAT04 MA5325 MAT-02
Contextual Info: ANALOG DEVICES Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 jjlV max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/VHz max High Gain hFE : 500 min at lc = 1 mA 300 min at lc = 1 pA Excellent Log Conformance: rBE - 0.3 ft

lvdt accelerometer

Abstract: Analog Devices AD7752 AD1845 AD22057 strain gauge OP07 REF01 AD1892 OP181 AD594 AD8541 AD215
Contextual Info: ANALOG DEVICES CD REFERENCE CATEGORY SUBCATEGORY A/D Converter < 1 MSPS Encoders no T/H, Multiple Supplies AD1376 AD5212 AD5215 AD570 AD571 AD573 AD574A AD578 AD673 AD674B AD7572 AD7572A AD7578 AD7582 AD7672 AD774B ADADC71 ADADC72 ADADC80 ADADC84 ADADC85 ADC912A

MAT04

Abstract: MAT04FS MAT04EY MAT04FP MAT04FY amplifier "current mirror" tpc single transistor amplifier circuits MAT-04
Contextual Info: a FEATURES Low Offset Voltage: 200 ␮V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/√Hz max Excellent Log Conformance: rBE = 0.6 ⍀ max Matching Guaranteed for All Transistors Available in Die Form

OP97

Abstract: AD706 AD708 LM158 LT1013 OP221 OP297 OP497
Contextual Info: Dual Low Bias Current Precision Operational Amplifier OP297 FEATURES Low Offset Voltage: 50 ␮V Max Low Offset Voltage Drift: 0.6 ␮V/؇C Max Very Low Bias Current: 100 pA Max Very High Open-Loop Gain: 2000 V/mV Min Low Supply Current Per Amplifier : 625 ␮A Max

LT20FI

Abstract: TRANSISTOR BC 2078 LT2C LT207
Contextual Info: rrw m _ LT2078/LT2079 TECHNOLOGY M icropow er, D ual a n d Q u a d , Single Supply, Precision O p Am ps K O T U f K S D C S C R IP T IO fl • SO Package with Standard Pinout ■ Supply Current per Amplifier: 50fiA Max ■ Offset Voltage: 70fiV Max

Contextual Info: MAT-04 PMI M ATCH ED MONOLITHIC Q UAD TRANSISTOR P re c isio n M o n o lith ic s Inc PIN CONNECTIONS FEATURES • • • • • • • Low Offset Voltage . 200|xV Max High Current Gain . 400 Min

OP44FZ

Abstract: PMI OP44 LF400 P-44E
Contextual Info: OP-44 PMÏ HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIER AyCL>3) P r e c is io n M o n o l i t h i c s In c . FEATURES • S lew R a te . 100V /|is MIN • G ain-B andw ldth P ro d u c t.1 5 M H z M IN

PM1008GP

Abstract: 1006G PM1008AZ C 1008 y transistor pm1008aj PM1008GS PM1008GJ
Contextual Info: PMfl PM-1008 LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER 1 M o n o i t h ic s 1 <^ FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine with low noise of only 17nV/\/Hz at 10Hz. The PM-1008&#39;s low

Contextual Info: LT 2078/LT 2079 Micropower, Dual and Quad, Single Supply, Precision Op Amps FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO DESCRIPTION Supply Current per Amplifier: 50µA Max Offset Voltage: 70µV Max Offset Current: 250pA Max Voltage Noise: 0.6µVP-P, 0.1Hz to 10Hz

SSM2126a

Abstract: ilc7660 low noise quad OP37 Application note AD652 AD698 7.1 surround sound dolby circuits voltage frequency table ad654 ADDS-2101-EZ-LAB ne5534 application note ad597
Contextual Info: Overview–Selection Trees ORGANIZATION PRECISION, LINEAR, GENERAL PURPOSE COMPONENTS Op Amp Overview Audio Analog Computation Analog Multiplexers PRECISION, LINEAR, APPLICATION SPECIFIC COMPONENTS COMMUNICATIONS APPLICATION SPECIFIC COMPONENTS A/D CONVERTERS

MAT02E

Abstract: MAT02F MAT03E MAT03F SSM2210 SSM2220
Contextual Info: Matched Transistors Lowest Grade Model Dual NPN MAT01G MAT01A MAT02F MAT02E SSM2210 500 100 220 70 200 2 0.5 1 0.3 2 430 @ 10nA 590 @ 10nA 200 @ 1uA 300 @ 1uA 250 @ 10uA 500 @ 10uA 300 @ 10uA 400 @ 10uA 200 610 @ 10mA 840 @ 10mA 400 @ 1mA 500 @ 1mA 300 8 3